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IPG20N06S4L14AATMA1

P1-P3P4-P6P7-P9
IPG20N06S4L-14A
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
I
D
T
C
=25 °C, V
GS
=10 V
1)
20 A
T
C
=100 °C,
V
GS
=10 V
2)
20
Pulsed drain current
2)
one channel active
I
D,pulse
-
80
Avalanche energy, single pulse
2, 4)
E
AS
I
D
=10A
90 mJ
Avalanche current, single pulse
4)
I
AS
-
15 A
Gate source voltage
V
GS
-±16V
Power dissipation
one channel active
P
tot
T
C
=25 °C
50 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
60 V
R
DS(on),max
4)
13.7
mΩ
I
D
20 A
Product Summary
Type Package Marking
IPG20N06S4L-14A PG-TDSON-8-10 4N06L14
PG-TDSON-8-10
R
ev. 1.0 page 1 2013-02-28
IPG20N06S4L-14A
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
---3K/W
SMD version, device on PCB
R
thJA
minimal footprint - 100 -
6 cm
2
cooling area
3)
-60-
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
60 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
= 20µA
1.2 1.7 2.2
Zero gate voltage drain current
4)
I
DSS
V
DS
=60 V, V
GS
=0 V,
T
j
=25 °C
-0.011µA
V
DS
=60 V, V
GS
=0 V,
T
j
=125 °C
2)
- 5 100
Gate-source leakage current
4)
I
GSS
V
GS
=16 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
4)
R
DS(on)
V
GS
=4.5 V, I
D
=10 A
-1620
mΩ
V
GS
=10 V, I
D
=17 A
- 11.6 13.7
Values
R
ev. 1.0 page 2 2013-02-28
IPG20N06S4L-14A
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
4)
C
iss
- 2220 2890 pF
Output capacitance
4)
C
oss
- 540 700
Reverse transfer capacitance
4)
C
rss
-2754
Turn-on delay time
t
d(on)
-8-ns
Rise time
t
r
-2.0-
Turn-off delay time
t
d(off)
-40-
Fall time
t
f
-15-
Gate Char
g
e Characteristics
2, 4)
Gate to source charge
Q
gs
- 7.5 10 nC
Gate to drain charge
Q
gd
-36
Gate charge total
Q
g
-3039
Gate plateau voltage
V
plateau
-3.4-V
Reverse Diode
Diode continous forward current
2)
one channel active
I
S
--20A
Diode pulse current
2)
one channel active
I
S,pulse
--80
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=17 A,
T
j
=25 °C
-0.951.3V
Reverse recovery time
2)
t
rr
V
R
=30 V, I
F
=I
S
,
di
F
/dt=100 A/µs
-35-ns
Reverse recovery charge
2, 4)
Q
rr
-35-nC
4)
Per channel
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 3K/W the chip is able to carry 45A at 25°C.
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f=1 MHz
V
DD
=30 V, V
GS
=10 V,
I
D
=20 A, R
G
=11 Ω
V
DD
=48 V, I
D
=20 A,
V
GS
=0 to 10 V
2)
Specified by design. Not subject to production test.
R
ev. 1.0 page 3 2013-02-28
P1-P3P4-P6P7-P9

IPG20N06S4L14AATMA1

Mfr. #:
Buy IPG20N06S4L14AATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_55/60V
Lifecycle:
New from this manufacturer.
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