ESDONCAN1LT1G

© Semiconductor Components Industries, LLC, 2013
October, 2016 − Rev. 1
1 Publication Order Number:
ESDONCAN1/D
ESDONCAN1, SESDONCAN1
CAN/CAN-FD Bus Protector
Low Capacitance ESD Protection Diode
for CAN/CAN−FD Bus
The S/ESDONCAN1 has been designed to protect the CAN
transceiver from ESD and other harmful transient voltage events. This
device provides bidirectional protection for each data line with a
single compact SOT−23 package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
Features
200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Diode Capacitance Matching
Low Reverse Leakage Current (< 100 nA)
Low Capacitance High−Speed FlexRay Data Rates
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1 x 50 ms)
ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
Flammability Rating UL 94 V−0
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
Typical Applications
Industrial
Smart Distribution Systems (SDS)
DeviceNet
Automotive
Controlled Area Network − CAN 2.1 / CAN FD
Low and High Speed CAN
SOT−23
CASE 318
STYLE 27
PIN 1
PIN 3
PIN 2
MARKING DIAGRAM
25E = Device Code
M = Date Code
G = Pb−Free Package
SOT−23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
200 W PEAK POWER
1
25EMG
G
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
www.onsemi.com
ESDONCAN1, SESDONCAN1
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C, unless otherwise specified)
Symbol
Rating Value Unit
PPK
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
200 W
T
J
Operating Junction Temperature Range −55 to 150 °C
T
J
Storage Temperature Range −55 to 150 °C
T
L
Lead Solder Temperature (10 s) 260 °C
ESD Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
8.0
400
23
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
V
RWM
Reverse Working Voltage (Note 2) 24 V
V
BR
Breakdown Voltage I
T
= 1 mA (Note 3) 26.2 32 V
I
R
Reverse Leakage Current V
RWM
= 24 V 15 100 nA
V
C
Clamping Voltage
I
PP
= 1 A (8 x 20 ms Waveform)
(Note 4)
33.4 36.6 V
V
C
Clamping Voltage
I
PP
= 3 A (8 x 20 ms Waveform)
(Note 4)
44 50 V
I
PP
Maximum Peak Pulse Current
8 x 20 ms Waveform (Note 4)
3.0 A
C
J
Capacitance V
R
= 0 V, f = 1 MHz (Line to GND) 10 pF
DC
Diode Capacitance Matching V
R
= 0 V, 5 MHz (Note 5) 0.26 2 %
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between C
J
of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Device Package Shipping
ESDONCAN1LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SESDONCAN1LT1G* SOT−23
(Pb−Free)
3,000 / Tape & Reel
ESDONCAN1LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SESDONCAN1LT3G* SOT−23
(Pb−Free)
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
ESDONCAN1, SESDONCAN1
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
Figure 1. Pulse Waveform, 8 × 20 ms
110
90
80
70
60
50
40
30
20
10
0
0 5 15 25
t, TIME (ms)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
t
r
= 8 ms
t
d
= 20 ms
t
d
= I
PP
/2
30
Figure 2. Clamping Voltage vs Peak Pulse Current
3.5
2.5
2.0
1.5
1.0
0.5
0.0
40
V
C
, CLAMPING VOLTAGE (V)
I
PP
, PEAK PULSE CURRENT (A)
30 35 45 50
100
10 20
c−t
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
5
05
V
R
, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
10 15 20 25
125°C
4
3
9
2
6
25°C
0
5
10
15
20
25
30
35
40
45
50
20 22 24 26 28 30 32 34
Figure 4. V
BR
versus I
T
Characteristics
T
A
= −55°C
125°C
25°C
65°C
V
BR
, VOLTAGE (V)
I
T
, (mA)
Figure 5. I
R
versus Temperature Characteristics
0
5
10
15
20
25
012345
−55°C
T
A
= +150°C
+25°C
I
L
, LEAKAGE CURRENT (nA)
V
R
, REVERSE BIAS VOLTAGE (V)
0
20
40
60
80
100
120
−60 −30 0 30 60 90 120 150 180
Figure 6. Temperature Power Dissipation Derating
TEMPERATURE (°C)
PERCENT DERATING (%)
3.0
7
8

ESDONCAN1LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors ESD PROTECTION
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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