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BS250P
P1-P1
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPT 93
FEATURES
*
45 Volt V
DS
*R
DS(on)
=14
Ω
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE M
AXIMUM
RATINGS.
PARAM
ETER
SYM
BOL
V
A
L
U
E
U
NI
T
Drain-
Source Volt
age
V
DS
-45
V
Continuous Drai
n Current at
T
amb
=25°
C
I
D
-230
mA
Pulsed Drai
n Current
I
DM
-3
A
Ga
te-S
ource
Vo
ltag
e
V
GS
±
20
V
Power Dissipati
on at T
am
b
=25°
C
P
tot
700
mW
Operati
ng and Storage Temperatur
e Range
T
j
:T
stg
-55 to +150
°C
ELECTRI
CAL CHARACTERI
STI
CS (at
T
amb
= 25°C).
PARAM
ETER
SYMBO
L
MIN.
TYP.
MAX
.
UNIT
CONDITIONS.
Drain-
Source
Breakdown Voltage
BV
DSS
-45
V
I
D
=-10
0
µ
A,
V
GS
=0V
Ga
te-S
ource
Threshold Volt
age
V
GS(t
h)
-1
-3.5
V
I
D
=-1mA, V
DS
=V
GS
Gate Body
Leakage
I
GSS
-20
nA
VGS=-
15V,
V
DS
=0V
Zero Gate Voltage
Drain Curr
ent
I
DSS
-500
nA
V
GS
=0V, V
DS
=-25
V
Stat
ic Dr
ain-
Sour
ce
on-State Resistance (1)
R
DS(on)
14
Ω
V
GS
=-10V, I
D
=-200mA
Forward
Transconductance (1)
(2)
g
fs
150
m
S
V
DS
=-1
0V, I
D
=-200mA
Input Capacit
ance (2)
C
iss
60
pF
V
GS
=0V, V
DS
=-10
V
f=1MHz
Turn-On Time (2)(
3)
t
(on
)
20
ns
V
DD
≈
-25V, I
D
=-500m
A
Tu
rn-O
ff Tim
e (2)(3
)
t
(off)
20
ns
(1) M
ea
sure
d u
nd
er p
ulse
d co
nd
ition
s. Pu
lse
wid
th=
300
µ
s. Duty cycle
≤
2
%
(2) S
am
ple tes
t
(3) Swi
tching ti
mes m
easured with a 50
Ω
source i
mpedance and <5n
s ri
se ti
me on a pulse
generat
or
BS250P
3-28
D
G
S
E-Line
TO92 Com
patibl
e
P1-P1
BS250P
Mfr. #:
Buy BS250P
Manufacturer:
Diodes Incorporated
Description:
MOSFET P-Chnl 45V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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