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VS-16CTQ080PBF

P1-P3P4-P6P7-P8
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 25-Aug-11
1
Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 8 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 8 A
V
R
60 V, 80 V, 100 V
V
F
at I
F
0.58 V
I
RM
max. 7 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
7.5 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 16 A
V
RRM
60 to 100 V
I
FSM
t
p
= 5 μs sine 850 A
V
F
8 A
pk
, T
J
= 125 °C (per leg) 0.58 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
16CTQ060PbF
VS-
16CTQ060-N3
VS-
16CTQ080PbF
VS-
16CTQ080-N3
VS-
16CTQ100PbF
VS-
16CTQ100-N3
UNITS
Maximum DC
reverse voltage
V
R
60 60 80 80 100 100 V
Maximum working
peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 148 °C, rectangular waveform
8
A
per device 16
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
850
A
10 ms sine or 6 ms rect. pulse 275
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH 7.50 mJ
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 25-Aug-11
2
Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.50 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
8 A
T
J
= 25 °C
0.72
V
16 A 0.88
8 A
T
J
= 125 °C
0.58
16 A 0.69
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= rated V
R
0.55
mA
T
J
= 125 °C 7.0
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.415 V
Forward slope resistance r
t
11.07 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
ABSOLUTE MAXIMUM RATINGS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
3.25
°C/W
Maximum thermal resistance
junction to case per package
R
thJC
1.63
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf ·in)
maximum 12 (10)
Marking device Case style TO-220AB
16CTQ060
16CTQ080
16CTQ100
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 25-Aug-11
3
Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
0 2.51.0
1.5
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.5 2.0
1000
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
20 60 80 10040
0.0001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 50 °C
T
J
= 75 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
1000
0 40 100
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
20 60 80
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
P1-P3P4-P6P7-P8

VS-16CTQ080PBF

Mfr. #:
Buy VS-16CTQ080PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-16CTQ080-M3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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