STPS360AF Datasheet STPS360AF | P1-P3

July 2016

DocID029486 Rev 1

1/8

This is information on a product in full production.

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STPS360

Power Schottky rectifier

Datasheet - production data

Features

 Negligible switching losses

 High junction temperature capability

 Low leakage current

 Good trade-off between leakage current and

forward voltage drop

 Avalanche specification

 ECOPACK

®

compliant component

Description

This high voltage Schottky barrier rectifier device

is packaged in SOD128Flat and designed for

high frequency miniature switched mode power

supplies and on board DC to DC converters.

Table 1: Device summary

Symbol

Value

I

F(AV)

3 A

V

RRM

60 V

T

j

(max.)

175 °C

V

F

(typ.)

0.49 V

SOD128Flat

A

K

Characteristics

STPS360

2/8

DocID029486 Rev 1

1 Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

60

V

I

F(AV)

Average forward current

T

L

= 140 °C, δ = 0.5, square pulse

3

A

I

FSM

Surge non repetitive forward

current

t

p

= 10 ms sinusoidal

65

A

P

ARM

Repetitive peak avalanche

power

t

p

= 10 µs, T

j

= 125 °C

140

W

T

stg

Storage temperature range

-65 to +175

°C

T

j

Operating junction temperature range

(1)

-40 to +175

°C

Notes:

(1)

(dP

tot

/dT

j

) < (1/R

th(j-a)

) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

R

th(j-l)

Junction to lead

16

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= 60 V

-

150

µA

T

j

= 125 °C

-

20

30

mA

V

F

(2)

Forward voltage drop

T

j

= 25 °C

I

F

= 3 A

-

0.61

V

T

j

= 125 °C

-

0.49

0.58

T

j

= 25 °C

I

F

= 6 A

-

0.80

T

j

= 125 °C

-

0.62

0.72

Notes:

(1)

Pulse test: t

p

= 5 ms, δ < 2%

(2)

Pulse test: t

p

= 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.44 x I

F(AV)

+ 0.047 x I

F

2

(RMS)

For more information, please refer to the following application notes related to the power

losses.

 AN604 (Calculation of conduction losses in a power rectifier)

 AN4021 (Calculation of reverse losses in a power diode)

STPS360

Characteristics

DocID029486 Rev 1

3/8

1.1 Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus ambient

temperature (δ = 0.5)

Figure 3: Normalized avalanche power derating

versus pulse duration (T

j

= 125 °C)

Figure 4: Relative variation of thermal impedance

junction to lead versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values)

0.0

0.5

1.0

1.5

2.0

2.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

I

F(AV)

(A)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

T

δ

= tp/T

tp

P

F(AV)

(W)

0

2

4

6

8

10

0 25 50 75 100 125 150 175

T

amb

(°C)

R

th(j-a)

= R

th(j-l)

T

δ

= tp/T

tp

I

F(AV)

(A)

P (t

p

)

P (10 µs)

ARM

0.001

0.01

0.1

1

1 10 100 1000

t (µs)

p

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t

P

(s)

Single pulse

Z

th(j-l)

/R

th(j-l)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0 10 20 30 40 50 60

V

R

(V)

T

j

= 125 °C

T

j

= 25 °C

T

j

= 100 °C

T

j

= 50 °C

T

j

= 75 °C

I

R

(mA)

10

100

1000

1 10 100

V

R

(V)

F = 1 MHz

V

OSC

= 30 mV

RMS

T

j

= 25 °C

C(pF)

STPS360AF

STPS360AF

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