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1N5622GP-E3/73

P1-P3P4-P4
Document Number: 88520 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Junction Rectifier
1N5614GP thru 1N5622GP
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, I
R
less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1)
JEDEC registered values
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
200 V to 1000 V
I
FSM
50 A
I
R
0.5 μA
V
F
1.2 V
T
J
max. 175 °C
DO-204AC (DO-15)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT
Maximum repetitive peak reverse voltage V
RRM
(1)
200 400 600 800 1000 V
Maximum RMS voltage V
RMS
140 280 420 560 700 V
Maximum DC blocking voltage V
DC
(1)
200 400 600 800 1000 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
(1)
50 A
Operating junction and storage temperature range T
J
, T
STG
(1)
- 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88520
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Note
(1)
JEDEC registered values
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT
Minimum reverse breakdown
voltage
50 μA V
BR
(1)
220 440 660 880 1100 V
Maximum instantaneous
forward voltage
1.0 A V
F
(1)
1.2 V
Maximum DC reverse current
at rated DC blocking voltage
T
A
= 25 °C
I
R
(1)
0.5
μA
T
A
= 100 °C 25
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
(1)
2.0 μs
Maximum junction
capacitance
12 V, 1 MHz C
J
45 35 25 20 15 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT
Typical thermal resistance R
JA
(1)
45 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5618GP-E3/54 0.425 54 4000 13" diameter paper tape and reel
1N5618GP-E3/73 0.425 73 2000 Ammo pack packaging
1N5618GPHE3/54
(1)
0.425 54 4000 13" diameter paper tape and reel
1N5618GPHE3/73
(1)
0.425 73 2000 Ammo pack packaging
Average Forward Rectied Current (A)
1.00
0.75
0.50
0.25
0
25 50 75 100 125 150 175
Ambient Temperature (°C)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1 10 100
50
40
30
20
10
0
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Document Number: 88520 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10
1
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
100
10
1
1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
P1-P3P4-P4

1N5622GP-E3/73

Mfr. #:
Buy 1N5622GP-E3/73
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.0A 1000 Volt 300ns 50 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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