ISL6522CVZ-TR5190

10
FN9030.8
March 10, 2006
the ESR (effective series resistance) and voltage rating
requirements rather than actual capacitance requirements.
High frequency decoupling capacitors should be placed as
close to the power pins of the load as physically possible. Be
careful not to add inductance in the circuit board wiring that
could cancel the usefulness of these low inductance
components. Consult with the manufacturer of the load on
specific decoupling requirements. For example, Intel
recommends that the high frequency decoupling for the
Pentium-Pro be composed of at least forty (40) 1.0µF
ceramic capacitors in the 1206 surface-mount package.
Use only specialized low-ESR capacitors intended for
switching-regulator applications for the bulk capacitors. The
bulk capacitor’s ESR will determine the output ripple voltage
and the initial voltage drop after a high slew-rate transient. An
aluminum electrolytic capacitor’s ESR value is related to the
case size with lower ESR available in larger case sizes.
However, the equivalent series inductance (ESL) of these
capacitors increases with case size and can reduce the
usefulness of the capacitor to high slew-rate transient loading.
Unfortunately, ESL is not a specified parameter. Work with
your capacitor supplier and measure the capacitor’s
impedance with frequency to select a suitable component. In
most cases, multiple electrolytic capacitors of small case size
perform better than a single large case capacitor.
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter’s response
time to the load transient. The inductor value determines the
converter’s ripple current and the ripple voltage is a function
of the ripple current. The ripple voltage and current are
approximated by the following equations:
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce
the converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
ISL6522 will provide either 0% or 100% duty cycle in response
to a load transient. The response time is the time required to
slew the inductor current from an initial current value to the
transient current level. During this interval the difference
between the inductor current and the transient current level
must be supplied by the output capacitor. Minimizing the
response time can minimize the output capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: I
TRAN
is the transient load current step, t
RISE
is the
response time to the application of load, and t
FALL
is the
response time to the removal of load. With a +5V input
source, the worst case response time can be either at the
application or removal of load and dependent upon the
output voltage setting. Be sure to check both of these
equations at the minimum and maximum output levels for
the worst case response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q1 turns on. Place the
small ceramic capacitors physically close to the MOSFETs
and between the drain of Q1 and the source of Q2.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through-hole design, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX
or equivalent) may be needed. For surface mount designs,
solid tantalum capacitors can be used, but caution must be
exercised with regard to the capacitor surge current rating.
These capacitors must be capable of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge current tested.
MOSFET Selection/Considerations
The ISL6522 requires two N-Channel power MOSFETs.
These should be selected based upon r
DS(ON)
, gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss
components; conduction loss and switching loss. The
conduction losses are the largest component of power
dissipation for both the upper and the lower MOSFETs.
These losses are distributed between the two MOSFETs
according to duty factor. The switching losses seen when
sourcing current will be different from the switching losses seen
when sinking current. When sourcing current, the upper
MOSFET realizes most of the switching losses. The lower
I =
V
IN
- V
OUT
Fs x L
--------------------------------
V
OUT
V
IN
----------------
V
OUT
= I x ESR
t
FALL
L
O
I
TRAN
×
V
OUT
-------------------------------=t
RISE
L
O
I
TRAN
×
V
IN
V
OUT
------------------------------- -=
ISL6522
11
FN9030.8
March 10, 2006
switch realizes most of the switching losses when the converter
is sinking current (see the equations below).
These equations assume linear voltage-current transitions
and do not adequately model power loss due the reverse-
recovery of the upper and lower MOSFET’s body diode. The
gate-charge losses are dissipated by the ISL6522 and do not
heat the MOSFETs. However, large gate-charge increases
the switching interval, t
SW
which increases the upper
MOSFET switching losses. Ensure that both MOSFETs are
within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate
heatsink may be necessary depending upon MOSFET
power, package type, ambient temperature and air flow.
Standard-gate MOSFETs are normally recommended for
use with the ISL6522. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFETs absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from V
CC
. The boot capacitor, C
BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V
CC
less the boot diode drop (V
D
) when the lower MOSFET, Q2
turns on. A logic-level MOSFET can only be used for Q1 if
the MOSFETs absolute gate-to-source voltage rating
exceeds the maximum voltage applied to V
CC
. For Q2, a
logic-level MOSFET can be used if its absolute gate-to-
source voltage rating exceeds the maximum voltage applied
to PVCC.
Figure 10 shows the upper gate drive supplied by a direct
connection to V
CC
. This option should only be used in
converter systems where the main input voltage is +5V
DC
or
less. The peak upper gate-to-source voltage is approximately
V
CC
less the input supply. For +5V main power and +12V
DC
for the bias, the gate-to-source voltage of Q1 is 7V. A logic-level
MOSFET is a good choice for Q1 and a logic-level MOSFET
can be used for Q2 if its absolute gate-to-source voltage rating
exceeds the maximum voltage applied to PV
CC
.
Schottky Selection
Rectifier D2 is a clamp that catches the negative inductor
swing during the dead time between turning off the lower
MOSFET and turning on the upper MOSFET. The diode must
be a Schottky type to prevent the lossy parasitic MOSFET
body diode from conducting. It is acceptable to omit the diode
and let the body diode of the lower MOSFET clamp the
negative inductor swing, but efficiency will drop one or two
percent as a result. The diode's rated reverse breakdown
voltage must be greater than the maximum input voltage.
P
LOWER
= Io
2
x r
DS(ON)
x (1 - D)
Where: D is the duty cycle = V
OUT
/ V
IN
,
t
SW
is the switching interval, and
F
S
is the switching frequency.
Losses while Sourcing Current
Losses while Sinking Current
P
LOWER
Io
2
r
DS ON()
× 1D()×
1
2
---
Io V
IN
× t
SW
F
S
××+=
P
UPPER
Io
2
r
DS ON()
× D×
1
2
---
Io V
IN
× t
SW
F
S
××+=
P
UPPER
= Io
2
x r
DS(ON)
x D
+12V
PGND
ISL6522
GND
LGATE
UGATE
PHASE
BOOT
VCC
+5V OR +12V
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
NOTE:
V
G-S
V
CC
- V
D
NOTE:
V
G-S
PVCC
C
BOOT
D
BOOT
Q1
Q2
PVCC
+5V
OR +12V
D2
+
-
V
D
+
-
+12V
PGND
LGATE
UGATE
PHASE
BOOT
VCC
+5V OR LESS
FIGURE 10. UPPER GATE DRIVE - DIRECT V
CC
DRIVE OPTION
NOTE:
V
G-S
V
CC
- 5V
NOTE:
V
G-S
PVCC
Q1
Q2
PVCC
+5V
OR +12V
D2
ISL6522
GND
+
-
ISL6522
12
FN9030.8
March 10, 2006
ISL6522 DC-DC Converter Application
Circuit
Figure 11 shows a DC-DC converter circuit for a
microprocessor application, originally designed to employ
the HIP6006 controller. Given the similarities between the
HIP6006 and ISL6522 controllers, the circuit can be
implemented using the ISL6522 controller without any
modifications. Detailed information on the circuit, including a
complete bill of materials and circuit board description, can
be found in Application Note AN9722. See Intersil’s home
page on the web: http://www.intersil.com.
ISL6522
RT
FB
COMP
SS
REF
-
+
GND
+
-
OSC
VCC
V
IN
C1-3
L1
C6-9
0.1µF
2x 1µF
0.1µF
1µF
15K
3x 680µF
4x 1000µF
UGATE
OCSET
PHASE
BOOT
SPARE
CR1
Q1
3.01K
1000pF
CR2
C13
R1
R4
C15
R5
C14
C12
C17-18
C19
R6
C20
4148
U1
RTN
12V
CC
14
2
10
9
8
74
5
1
3
SPARE
PGND
LGATE
12
11
PVCC
13
JP1
Q2
1206
1206
MBR
340
V
OUT
RTN
ENABLE
R2
1K
COMP
TP1
PHASE
TP2
6
R7
10K
MONITOR AND
PROTECTION
+
-
+
-
C16
0.01µF
33pF
SPARE
Component Selection Notes:
C1-C3 - Three each 680µF 25W VDC, Sanyo MV-GX or equivalent.
C6-C9 - Four each 1000µF 6.3W VDC, Sanyo MV-GX or equivalent.
L1 - Core: micrometals T50-52B; winding: ten turns of 17AWG.
CR1 - 1N4148 or equivalent.
CR2 - 3A, 40V Schottky, Motorola MBR340 or equivalent.
Q1, Q2 - Fairchild MOSFET; RFP25N05
FIGURE 11. DC-DC CONVERTER APPLICATION CIRCUIT
R3
1K
ISL6522

ISL6522CVZ-TR5190

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Switching Controllers 52831C01 MASKONLYFOR CUSTMRS LIKE ATI STD
Lifecycle:
New from this manufacturer.
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