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NTMFS5H414NLT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
October, 2017 − Rev. 0
1 Publication Order Number:
NTMFS5H414NL/D
NTMFS5H414NL
Power MOSFET
40 V, 1.4 mW, 210 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JC
(Notes 1, 3)
Steady
State
T
C
= 25°C
I
D
210
A
T
C
= 100°C 130
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
P
D
110
W
T
C
= 100°C 45
Continuous Drain
Current R
q
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25°C
I
D
35
A
T
A
= 100°C 22
Power Dissipation
R
q
JA
(Notes 1 & 2)
T
A
= 25°C
P
D
3.1
W
T
A
= 100°C 1.3
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
900 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
+ 150
°C
Source Current (Body Diode) I
S
120 A
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 44 A)
E
AS
290 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
R
q
JC
1.1
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
www.onsemi.com
5H414L
AYWZZ
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
40 V
1.4 mW @ 10 V
210 A
2.0 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
5H414L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
NTMFS5H414NL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
17
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C 10
mA
T
J
= 125°C 250
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.2 1.55 2.0 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
−4.5 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 20 A 1.1 1.4
mW
V
GS
= 4.5 V I
D
= 20 A 1.5 2.0
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 20 V
4550
pF
Output Capacitance C
OSS
985
Reverse Transfer Capacitance C
RSS
74
Output Charge Q
OSS
V
GS
= 0 V, V
DD
= 20 V 45 nC
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 20 A 35
nC
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 20 V; I
D
= 20 A 75
Threshold Gate Charge Q
G(TH)
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 20 A
7.0
Gate−to−Source Charge Q
GS
11.5
Gate−to−Drain Charge Q
GD
10
Plateau Voltage V
GP
2.6 V
Gate Resistance R
G
T
A
= 25°C 0.7
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 20 A, R
G
= 2.5 W
15.2
ns
Rise Time t
r
52.3
Turn−Off Delay Time t
d(OFF)
38.8
Fall Time t
f
11.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C 0.75 1.2
V
T
J
= 125°C 0.6
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 20 A
51.7
ns
Charge Time t
a
28.1
Discharge Time t
b
23.6
Reverse Recovery Charge Q
RR
68 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMFS5H414NL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
25
50
75
100
125
200
3.02.01.00.50
0
25
50
75
100
125
200
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
109
0
2
120100 200806040200
0.6
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.6
0.8
1.2
1.4
1.8
40302520105
10
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
I
DSS
, LEAKAGE (nA)
2.8 V
3.4 V
V
DS
= 10 V
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
= 25°C
I
D
= 20 A
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 10 V
I
D
= 20 A
50
T
J
= 125°C
T
J
= 85°C
1
5
87653 140 160
0.8
1.0
1.6
2.0
1.2
1.8
T
J
= 150°C
100,000
2.5 4.0
V
GS
= 10 V to 3.6 V
4
3
1.4
1.6
1.0
100
3.2 V
3.0 V
150
175
150
175
1.5 3.5
4 180
15 35
P1-P3P4-P6

NTMFS5H414NLT1G

Mfr. #:
Buy NTMFS5H414NLT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET T8 40V LOW COSS POWER MOSFET
Lifecycle:
New from this manufacturer.
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