DCP69A/-16
NOT RECOMMENDED FOR NEW
DESIGNS, USE DCP69/-16
PNP SURFACE MOUNT TRANSISTO
R
Features
• Epitaxial Planar Die Construction
• Complementar
y NPN Type Available (DCP68)
• Ideally
Suited for Automated Assembly Processes
• Ideal for Medium
Power Switching or Amplification Applications
• Lead Free
By Design/RoHS Compliant (Note 1)
• "Gree
n" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material:
Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity
: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin a
nnealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD -202, Method 208
• Marking & T
ype Code Information: See Page 3
• Orde
ring Information: See Page 3
• Weight: 0.115 gr
ams (approximate)
2
3
4
1
4
3
2
1
C
C
B
E
3
1
2,4
BASE
COLLECTOR
EMITTER
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Collector-Base Voltage
V
CBO
-25 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current
I
C
-1.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation @ T
A
= 25ºC (Note 3) P
d
1 W
Thermal Resistance, Junction to Ambient Air @ T
A
= 25°C (Note 3)
R
θ
JA
125
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
V
(BR)CES
-25 — — V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-20 — — V
I
C
= -1.0mA, I
B
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
-25 — — V
I
C
= -10μA, I
E
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0 — — V
I
E
= -10μA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
— — -100 nA
V
CB
= -25V, I
E
= 0
Emitter-Base Cutoff Current
I
EBO
— — -10
μA
V
EB
= -5.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
I
C
= -5.0mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -1.0V
I
C
= -1.0A, V
CE
= -1.0V
DCP69A, DCP69A-16
50
85
40
—
—
—
—
375
—
DC Current Gain
DCP69A-16
h
FE
100 — 250
—
I
C
= -500mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
— — -0.5 V
I
C
= -1.0A, I
B
= -100mA
— -0.6 —
I
C
= -5mA, V
CE
= 10V
Base-Emitter Turn-On Voltage
V
BE (ON)
— — -1.0
V
I
C
= -1.0A, V
CE
= -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
— 250 — MHz
I
C
= -100mA, V
CE
= -5.0V
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/d
atasheets/ap02001.pdf.
4. Mea
sured under pulsed conditions. Pulse width = 300μs. Duty cycle <
2%.
DS31102 Rev. 6 - 3 1 of 4
www.diodes.com
DCP69A/-16
© Diodes Incorporated
