For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
Typical Supply Current vs. Vdd1 & Vdd2
Vdd (Vdc) Idd (mA)
+4.5 67.2
+5.0 67.4
+5.5 67.6
Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc
RF Input Power (RFIN)(Vs = +5.0 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.94 mW/°C above 85 °C)
0.451 W
Thermal Resistance
(channel to ground paddle)
144 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC382LP3 / 382LP3E
v01.0610
Recommended Bias Resistor Values
for Various Idd1 & Idd2
Idd1 + Idd2 (mA) Rbias (Ohms)
60 27
70 16
80 13
100 8.2
120 3.9
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Gain, Noise Figure & P1dB vs.
Supply Current @ 1900 MHz
12
14
16
18
20
22
24
0.2
0.4
0.6
0.8
1
1.2
1.4
60 70 80 90 100 110 120
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY CURRENT (mA)
P1dB vs. Temperature @ Idd = 67 mA
Output IP3 vs. Temperature Idd = @ 67 mA
Psat vs. Temperature @ Idd = 67 mA
10
12
14
16
18
20
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
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