OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BCW66GLT1

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 0
1 Publication Order Number:
BCW66GLT1/D
BCW66GLT1
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
45 Vdc
Collector−Base Voltage V
CBO
75 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
800 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
http://onsemi.com
EG = Specific Device Code
M = Date Code
MARKING DIAGRAM
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
BCW66GLT1 SOT−23 3000 / Tape & Reel
BCW66GLT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
EG M
3000 / Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
BCW66GLT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
45 − − Vdc
Collector−Emitter Breakdown Voltage
(I
C
= 10 Adc, V
EB
= 0)
V
(BR)CES
75 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0 − − Vdc
Collector Cutoff Current
(V
CE
= 45 Vdc, I
E
= 0)
(V
CE
= 45 Vdc, I
E
= 0, T
A
= 150°C)
I
CES
−
−
−
−
20
20
nAdc
Adc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
− − 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 Adc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
h
FE
50
110
160
60
−
−
−
−
−
−
400
−
−
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
−
−
0.7
0.3
−
−
Vdc
Base−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
− − 2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− − 12 pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− − 80 pF
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 1.0 k, f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
SWITCHING CHARACTERISTICS
Turn−On Time
(I
B1
= I
B2
= 15 mAdc)
t
on
− − 100 ns
Turn−Off Time
(I
C
= 150 mAdc, R
L
= 150 )
t
off
− − 400 ns
BCW66GLT1
http://onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
J
K
L
A
C
B
S
H
GV
3
1
2
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
P1-P3P4-P4

BCW66GLT1

Mfr. #:
Buy BCW66GLT1
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 45V 0.8A SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet