Product Standards
Transistors with Built-in Resistor
DRA9A24E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
22 +30%
k
Resistance ratio R1/R2
0.8 1.0 1.2 -
Input resistance R1
-30%
-0.8 V
-2.6 V
Input voltage
Vi(on)
VCE = -0.2 V, IC = -5 mA
Vi(off)
VCE = -5 V, IC = -100 μA
-
Collector-emitter saturation voltage VCE(sat)
IC = -10 mA, IB = -0.5 mA -0.25 V
Forward current transfer ratio hFE
VCE = -10 V, IC = -5 mA 60
-0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = -6 V, IC = 0 -0.2 mA
Collector-emitter cutoff current (Base open)
ICEO
VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open) VCEO
IC = -2 mA, IB = 0 -50
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = -10 μA, IE = 0 -50 V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj 150 °C
Total power dissipation PT 125 mW
Collector current IC -80 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
R1
22
k
R2 22
k
1of3
Unit: mm
Min Typ
SC-89
Collector
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRA9A24E0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9A24E
DRA5A24E in SSMini3 type package
Features
Marking Symbol:
GN
Code
Base
Emitter
SOT-490
Panasonic
Packaging
SSMini3-F3-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
+85 °COperating ambient temperature Topr -40 to
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
C
B
R
1
R
2
E
