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BC847BPN,125

P1-P3P4-P6P7-P9P10-P12P13-P15
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 3 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT363 (SC-88)
T
amb
(°C)
−75 17512525 75−25
006aab419
200
300
100
400
500
P
tot
(mW)
0
(1)
(2)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 568 K/W
[2]
- - 500 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 230 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 416 K/W
[2]
- - 313 K/W
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 4 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab420
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
δ = 1
0.75
0.50
0.33
0.10
0.05
0.02
0.01
0
0.20
006aab421
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
δ = 1
0.75
0.50
0.33
0.10
0.05
0.02
0.01
0.20
0
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 5 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-basecut-off
current
V
CB
=30V; I
E
=0A --15nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--5µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
= 2 mA 200 - 450
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 100 mV
I
C
= 100 mA; I
B
=5mA
[1]
- - 300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - 755 - mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
=5V
TR1 (NPN) 580 655 700 mV
TR2 (PNP) 600 655 750 mV
C
c
collector capacitance I
E
=i
e
= 0 A; V
CB
=10V;
f=1MHz
TR1 (NPN) - - 1.5 pF
TR2 (PNP) - - 2.2 pF
C
e
emitter capacitance I
C
=i
c
= 0 A; V
EB
= 0.5 V;
f=1MHz
TR1 (NPN) - 11 - pF
TR2 (PNP) - 10 - pF
f
T
transition frequency I
C
= 10 mA; V
CE
=5V;
f = 100 MHz
100 - - MHz
P1-P3P4-P6P7-P9P10-P12P13-P15

BC847BPN,125

Mfr. #:
Buy BC847BPN,125
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Trans GP BJT NPN/PNP 45V 0.1A 6-Pin
Lifecycle:
New from this manufacturer.
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