www.irf.com 1
11/17/05
IRF6611
DirectFET Power MOSFET
Description
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
TM
packaging to achieve the lowest
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
DS(on)
, gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R
DS(on)
and high Cdv/
dt immunity for synchronous FET applications.
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical On-Resistance vs. Gate Voltage
l RoHS compliant containing no lead or bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching above 1MHz
l Ideal for CPU Core DC-DC Converters
l Optimized for SyncFET Socket of Sync. Buck Converter
l Low Conduction Losses
l Compatible with Existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.91mH, R
G
= 25Ω, I
AS
= 22A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Notes:
SQ SX ST MQ MX MT
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max
2.0mΩ@ 10V 2.6mΩ@ 4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
37nC 12nC 3.3nC 16nC 23nC 1.7V
0 1 2 3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
5
10
15
20
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
I
D
= 27A
T
J
= 25°C
T
J
= 125°C
0 1020304050
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 22A
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
22
Max.
26
150
220
±20
30
32
310
PD - 96978E
