OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BSR31,135

P1-P3P4-P6P7-P8
2004 Dec 13 3
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR30; BSR31 − −70 V
BSR33 − −90 V
V
CEO
collector-emitter voltage open base
BSR30; BSR31 − −60 V
BSR33 − −80 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −1 A
I
CM
peak collector current − −2 A
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.35 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 93 K/W
R
th(j-s)
thermal resistance from junction to soldering point 13 K/W
2004 Dec 13 4
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ < 0.01.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0 A; V
CB
= −60 V − −100 nA
I
E
= 0 A; V
CB
= −60 V; T
j
= 150 °C − −50 μA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= −5 V − −100 nA
h
FE
DC current gain I
C
= −100 μA; V
CE
= −5 V; note 1
BSR30 10 −
BSR31; BSR33 30 −
DC current gain I
C
= −100 mA; V
CE
= −5 V; note 1
BSR30 40 120
BSR31; BSR33 100 300
DC current gain I
C
= −500 mA; V
CE
= −5 V; note 1
BSR30 30 −
BSR31; BSR33 50 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −150 mA; I
B
= −15 mA; note 1 − −0.25 V
I
C
= −500 mA; I
B
= −50 mA; note 1 − −0.5 V
V
BEsat
base-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA; note 1 − −1 V
I
C
= −500 mA; I
B
= −50 mA; note 1 − −1.2 V
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f
= 100 MHz
100 − MHz
2004 Dec 13 5
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62
04-08-03
06-03-16
w M
e
1
e
E
H
E
B
0 2 4 mm
scale
b
p3
b
p2
b
p1
c
D
L
p
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
H
E
L
p
4.25
3.75
e
3.0
w
0.13
e
1
1.5
1.2
0.8
b
p2
b
p1
0.53
0.40
b
p3
1.8
1.4
P1-P3P4-P6P7-P8

BSR31,135

Mfr. #:
Buy BSR31,135
Manufacturer:
Nexperia
Description:
TRANS PNP 60V 1A SOT89
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet