TC2117
DS21665D-page 2 2010 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage.................... (V
SS
– 0.3) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin .........V
IN
+0.3V to -0.3V
Operating Temperature ...............-40°C < T
J
< +125°C
Storage temperature ..........................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only and functional operation
of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not
implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
IN
= V
R
+ 1.5V, (Note 1), I
L
= 100 µA, C
L
= 3.3 µF, T
A
= +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage V
IN
2.7 — 6.0 V Note 2
Maximum Output Current I
OUTMAX
800 ——mA
Output Voltage V
OUT
V
R
– 2.5% V
R
± 0.5% V
R
+ 2.5% VV
R
2.5V
V
R
– 2% V
R
± 0.5% V
R
+ 3% V
R
= 1.8V
V
OUT
Temperature Coefficient V
OUT
/T — 40 — ppm/°C Note 3
Line Regulation V
OUT
/V
IN
— 0.007 0.35 %(V
R
+ 1V) V
IN
6V
Load Regulation (Note 4) V
OUT
/V
OUT
-0.01 0.002 0 %/mA I
L
= 0.1 mA to I
OUTMAX
Dropout Voltage (Note 5) V
IN
–V
OUT
—2030 mV V
R
2.5V, I
L
= 100 µA
—50160
V
R
2.5V, I
L
= 100 mA
— 150 480
V
R
2.5V, I
L
= 300 mA
— 260 800
V
R
2.5V, I
L
= 500 mA
— 450 1300
V
R
2.5V, I
L
= 800 mA
— 1000 1200 V
R
= 1.8V, I
L
= 500 mA
— 1200 1400 I
L
= 800 mA
Supply Current I
DD
—80130 µA SHDN = V
IH
, I
L
= 0
Power Supply Rejection Ratio PSRR — 55 — db F 1kHz
Output Short Circuit Current I
OUTSC
— 1200 — mA V
OUT
= 0V
Thermal Regulation V
OUT
/P
D
—0.04—V/WNote 6
Output Noise eN — 300 — nV/Hz
I
L
= 100 mA, F = 10 kHZ
Note 1: V
R
is the regulator output voltage setting.
2: The minimum V
IN
has to justify the conditions: V
IN
V
R
+ V
DROPOUT
and V
IN
2.7V for I
L
= 0.1 mA to I
OUTMAX
.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value measured at a 1.5V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 4.2 “Thermal Considerations” for
more details.
TCV
OUT
V
OUTM AX
V
OUTM IN
–10
6
–
V
OUT
T
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