DocID023206 Rev 4 7/20
VNLD5090-E Electical specifications
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2 Electical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the Table 4 may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
2.2 Thermal data
Table 4. Absolute maximum ratings
Symbol Parameter
Value
Unit
SO-8
V
DS
Drain-source voltage (V
IN
= 0 V) Internally clamped V
I
D
DC drain current Internally limited A
-I
D
Reverse DC drain current 12.5 A
I
S
DC supply current -1 to 10 mA
I
IN
DC input current -1 to 10 mA
I
STAT
DC status current -1 to 10 mA
V
ESD1
Electrostatic discharge
(R
= 1.5 kΩ; C
= 100 pF)
– DRAIN
– SUPPLY, INPUT, STATUS
5000
4000
V
V
ESD2
Electrostatic discharge on output pin only
(R
= 330 Ω, C
= 150 pF)
2000 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
E
AS
Single pulse avalanche energy
(L = 1.1 mH; T
j
= 150 °C; R
L
= 0; I
OUT
= I
limL
)
50 mJ
Table 5. Thermal data
Symbol Parameter
Maximum value
Unit
SO-8
R
thj-amb
Thermal resistance junction-ambient 108 °C/W
