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BAV19WS-G RRG

P1-P3P4-P4
- Fast Switching Speed
- Surface Mount Package Ideally Suited For Automatic Insertion
- High Conductance
- Packing code with suffix "G" means
green compound (halogen-free)
- Halogen-free according to IEC 61249-2-21
Surface mount fast switching diode
General purpose small signal switching
MECHANICAL DATA
- Case: SOD-323 small outline plastic package
- Moisture sensitivity level 1
- Polarity: Indicated by cathode band
- Weight: 4.36 ± 0.5 mg
SYMBOL UNIT
I
O
mA
V
RRM
V
V
R
V
I
FRM
mA
P
D
mW
R
θJA
°C/W
T
J
, T
STG
°C
SYMBOL UNIT
C
J
pF
t
rr
ns
Document Number: DS_S0000021 Version: A15
BAV19WS-G/BAV20WS-G/BAV21WS-G
APPLICATION
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
SOD-323
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER BAV19WS-G BAV20WS-G BAV21WS-G
Taiwan Semiconductor
Small Signal Product
200mA, 120V - 250V Switching Diodes
FEATURES
V
V
F
V
V
(BR)R
PARAMETER
I
FSM
A
Junction and Storage Temperature Range
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1 s
nA
Note 1: Test condition : I
R
= 100μA
BAV21WS-G
BAV20WS-G
BAV19WS-G
I
R
-5
-50
Note 2: Test condition : BAV19WS-G @ V
R
=100V, BAV20WS-G @ V
R
=150V, BAV21WS-G @ V
R
=200V
Note 3: Test condition : I
F
= I
R
= 30mA , R
L
=100Ω , Irr=0.1xI
R
Breakdown Voltage
(Note 1)
Reverse Recovery Time (Note 3)
Junction Capacitance
Reverse Leakage Current
(Note 2)
Forward Voltage
V
R
=0, f=1.0MHz
I
F
=100mA
BAV21WS-G
BAV20WS-G
Pulse Width = 1 μs
Average Rectified Output Current
-65 to 150
0.5
2.5
200
120
625
200 250
MIN MAX
120
200 -
250
BAV19WS-G
I
F
=200mA
-
- 100
-
-1.00
-1.25
Power Dissipation 200
Thermal Resistance Junction to Ambient 625
Repetitive Peak Reverse Voltage
100 150 200DC Reverse Voltage
Repetitive Peak Forward Surge Current
BAV19WS-G/BAV20WS-G/BAV21WS-G
Small Signal Product
(T
A
=25°C unless otherwise noted)
Document Number: DS_S0000021 Version: A15
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
I
F
,Instantaneous Forward Current (A)
V
F
, Instantaneous Forward Voltage (V)
Fig. 1 Typical Forward Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 50 100 150 200 250
I
R
, Instantaneous Reverse Current (μA)
V
R
, Instantaneous Reverse Voltage (V)
Fig. 2 Typical Reverse Characteristics
T
A
=75
o
C
T
A
=25
o
C
T
A
=0
o
C
T
A
=-40
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 10203040
C
T
, Total Capacitance (pF)
V
R
, Reverse Voltage (V)
Fig. 3 Typical Capacitance VS. Reverse Voltage
0
50
100
150
200
250
0 40 80 120 160 200
P
D
, Power Dissipation (mW)
T
A
, ambient Temperature (
o
C)
Fig. 4 Power Derating Curve
T
A
=150
o
C
T
A
=150
o
C
T
A
=125
o
C
T
A
=75
o
C
T
A
=25
o
C
T
A
=0
o
C
T
A
=-40
o
C
f=1.0 MHz
T
A
=125
o
C
BAV19WS-G/BAV20WS-G/BAV21WS-G
Note 2: Whole series with green compound
DIMENSIONS
Min Max Min Max
A 1.150 1.400 0.045 0.055
B 2.300 2.700 0.091 0.106
C 0.250 0.450 0.010 0.018
D 1.600 1.800 0.063 0.071
E 0.800 1.000 0.031 0.039
F 0.050 0.177 0.002 0.007
G
H - 0.100 - 0.004
SUGGESTED PAD LAYOUT
G
X
X1
Y
Note: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary depending on application
Marking
A8
T2
T3
Document Number: DS_S0000021 Version: A15
Small Signal Product
SOD-323
ORDERING INFORMATION
Unit (mm) Unit (inch)
Typ. Typ.
3K / 7" Reel
Unit (inch)
PACKING CODE
SUFFIX
Taiwan Semiconductor
BAV21WS-G
0.630 0.025
2.850 0.112
0.830 0.033
SOD-323
0.019 REF
MARKING
BAV20WS-G
BAV19WS-G
Part No.
DIM.
Unit (mm)
DIM.
0.475 REF
1.600
PART NO. PACKING CODE
PACKING CODE
SUFFIX
PACKAGE PACKING
BAVxxWS-G
(Note 1, 2)
RR G
Note 1: "xx" is Device Code from "BAV19WS-G" to "BAV21WS-G".
EXAMPLE
PREFERRED P/N PART NO. PACKING CODE DESCRIPTION
0.063
BAV19WS-G RRG BAV19WS-G RR G Green compound
B
A
E
D
C
F
G
H
P1-P3P4-P4

BAV19WS-G RRG

Mfr. #:
Buy BAV19WS-G RRG
Manufacturer:
Taiwan Semiconductor
Description:
Diodes - General Purpose, Power, Switching Switching diode 200mW
Lifecycle:
New from this manufacturer.
Delivery:
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