SiHG17N80E
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Vishay Siliconix
S17-0898-Rev. A, 12-Jun-17
4
Document Number: 91989
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Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
0
3
6
9
12
0 20406080
V
GS
, Gate-to-Source Voltage (V)
Q
g
, Total Gate Charge (nC)
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
I
SD
, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
0.01
0.1
1
10
100
1 10 100 1000
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS(on)
*
1 ms
I
DM
limited
T
C
= 25 °C
T
J
= 150 °C
single pulse
BVDSS limited
10 ms
100 μs
Operation in this area
limited by R
DS(on)
0
3
6
9
12
15
18
25 50 75 100 125 150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
775
800
825
850
875
900
925
950
975
1000
1025
-60 -40 -20 0 20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Breakdown Voltage (V)
T
J
, Junction Temperature (°C)
I
D
= 250 μA
