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IXTY2N100P

P1-P3P4-P5
© 2017 IXYS CORPORATION, All Rights Reserved
DS99817C(8/17)
IXTY2N100P
IXTA2N100P
IXTP2N100P
V
DSS
= 1000V
I
D25
= 2A
R
DS(on)
7.5
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 100μA 2.5 4.5 V
I
GSS
V
GS
= 20V, V
DS
= 0V 50 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 5 A
T
J
= 125C 250 A
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 6.0 7.5
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 1000 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 1000 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C2A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
5A
I
A
T
C
= 25C2A
E
AS
T
C
= 25C 150 mJ
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 10 V/ns
P
D
T
C
= 25C86W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
F
C
Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
M
d
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
Features
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Lasers Drivers

Robotics and Servo Controls
Polar
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
G = Gate D = Drain
S = Source Tab = Drain
G
D
S
TO-220 (IXTP)
D (Tab)
TO-252 (IXTY)
G
S
TO-263 (IXTA)
G
D (Tab)
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY2N100P IXTA2N100P
IXTP2N100P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 1.00 1.7 S
C
iss
655 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 44 pF
C
rss
9.2 pF
Q
g(on)
24.3 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
4.4 nC
Q
gd
12.6 nC
t
d(on)
25 ns
t
r
29 ns
t
d(off)
80 ns
t
f
27 ns
R
thJC
1.45 C/W
R
thCS
TO-220 0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 25 (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 2 A
I
SM
Repetitive, Pulse Width Limited by T
JM
6 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
800 ns
I
F
= 2A, -di/dt = 100A/μs, V
R
= 100V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY2N100P IXTA2N100P
IXTP2N100P
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
.
Fig. 4. R
DS(on)
Normalized to I
D
= 1A Value
vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 2A
I
D
= 1A
Fig. 5. R
DS(on)
Normalized to I
D
= 1A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 0.5 1 1.5 2 2.5 3 3.5
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0246810121416
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
P1-P3P4-P5

IXTY2N100P

Mfr. #:
Buy IXTY2N100P
Manufacturer:
Littelfuse
Description:
MOSFET 2 Amps 1000V 7.5 Rds
Lifecycle:
New from this manufacturer.
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