©2000 Fairchild Semiconductor International Rev. A, July 2000
FYPF1504DN
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C
=25
°
°°
°
C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
(per diode)
* Pulse Test: Pulse Width=300
µ
s, Duty Cycle
=
2%
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 40 V
V
R
Maximum DC Reverse Voltage 40 V
I
F(AV)
Maximum Average Rectified Current @ T
C
= 120
°
C15 A
I
FSM
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
100 A
T
J,
T
STG
Operating Junction and Storage Temperature -40 to +150
°
C
Symbol Parameter Value Units
R
θ
JC
Maximum Thermal Resistance, Junction to Case (per diode) 4.0
°
C/W
Symbol Parameter Value Units
V
FM
*
Maximum Instantaneous Forward Voltage
I
F
= 7.5A
I
F
= 7.5A
I
F
= 15A
I
F
= 15A
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
0.55
0.49
0.67
0.65
V
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25
°
C
T
C
= 125
°
C
1
60
mA
FYPF1504DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
TO-220F
1 2 3
1. Anode 2.Cathode 3. Anode