FDV304P Datasheet FDV304P, FDV304P-D87Z, FDV304P_NB8U003 | P1-P3

August 1997

FDV304P

Digital FET, P-Channel

General Description Features

Absolute Maximum Ratings T

A

= 25

o

C unless other wise noted

Symbol Parameter FDV304P Units

V

DSS

Drain-Source Voltage -25 V

V

GSS

Gate-Source Voltage -8 V

I

D

Drain Current - Continuous -0.46 A

- Pulsed -1.5

P

D

Maximum Power Dissipation 0.35 W

T

J

,T

STG

Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6.0 kV

THERMAL CHARACTERISTICS

R

θ

JA

Thermal Resistance, Junction-to-Ambient 357 °C/W

FDV304P Rev.E1

-25 V, -0.46 A continuous, -1.5 A Peak.

R

DS(ON)

= 1.1 Ω @ V

GS

= -4.5 V

R

DS(ON)

= 1.5 Ω @ V

GS

= -2.7 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th)

< 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

This P-Channel enhancement mode field effect transistors is

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery power applications

such as notebook computers and cellular phones. This device

has excellent on-state resistance even at gate drive voltages as

low as 2.5 volts.

Mark:304

SOT-23

SuperSOT

TM

-8

SOIC-16

SO-8

SOT-223

SuperSOT

TM

-6

S

D

G

Electrical Characteristics (T

A

= 25

O

C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= -250 µA -25 V

∆BV

DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

I

D

= -250 µA, Referenced to 25

o

C

-22

mV /

o

C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= -20 V, V

GS

= 0 V

-1 µA

T

J

= 55°C

-10 µA

I

GSS

Gate - Body Leakage Current V

GS

= -8 V, V

DS

= 0 V -100 nA

ON CHARACTERISTICS (Note)

∆V

GS(th)

/∆T

J

Gate Threshold Voltage Temp. Coefficient

I

D

= -250 µA, Referenced to 25

o

C

2.1

mV /

o

C

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= -250 µA

-0.65 -0.86 -1.5 V

R

DS(ON)

Static Drain-Source On-Resistance V

GS

= -2.7 V, I

D

= -0.25 A 1.22 1.5

Ω

V

GS

= -4.5 V, I

D

= -0.5 A

0.87 1.1

T

J

=125°C 1.21 2

I

D(ON)

On-State Drain Current

V

GS

= -2.7 V, V

DS

= -5 V

-0.5 A

V

GS

= -4.5 V, V

DS

= -5 V -1

g

FS

Forward Transconductance

V

DS

= -5 V, I

D

= -0.5 A

0.8 S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance V

DS

= -10 V, V

GS

= 0 V,

f = 1.0 MHz

63 pF

C

oss

Output Capacitance 34 pF

C

rss

Reverse Transfer Capacitance 10 pF

SWITCHING CHARACTERISTICS (Note)

t

D(on)

Turn - On Delay Time

V

DD

= -6 V, I

D

= -0.5 A,

V

GS

= -4.5 V, R

GEN

= 50 Ω

7 20 ns

t

r

Turn - On Rise Time 8 20 ns

t

D(off)

Turn - Off Delay Time 55 110 ns

t

f

Turn - Off Fall Time 35 70 ns

Q

g

Total Gate Charge

V

DS

= -5 V, I

D

= - 0.25 A,

V

GS

= -4.5 V

1.1 1.5 nC

Q

gs

Gate-Source Charge 0.32 nC

Q

gd

Gate-Drain Charge 0.25 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current -0.5 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, I

S

= -0.5 A

(Note)

-0.89 -1.2 V

Note:

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV304P Rev.E1

-5-4-3-2-10

-1.5

-1.25

-1

-0.75

-0.5

-0.25

0

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -4.5V

GS

DS

D

-2.7

-2.5

-2.0

-3.0

-1.5

-3.5

-1-0.8-0.6-0.4-0.20

-1.6

-1.4

-1.2

-1

-0.8

-0.6

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -2.0 V

GS

D

R , NORMALIZED

DS(on)

-3.5

-4.5

-2.7

-2.5

-3.0

-4.0

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

-3-2.5-2-1.5-1-0.5

-1

-0.75

-0.5

-0.25

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = -5V

DS

GS

D

T = -55°C

J

125°C

25°C

Figure 5. Transfer Characteristics.

0 0.2 0.4 0.6 0.8 1 1.2

0.0001

0.01

0.1

0.5

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZED

DS(ON)

V = -2.7V

GS

I = -0.25A

D

-5-4.5-4-3.5-3-2.5-2-1.5-1

0

1

2

3

4

5

V , GATE TO SOURCE VOLTAGE (V)

GS

R , ON-RESISTANCE (OHM)

DS(on)

125°C

25°C

I = -0.5A

D

FDV304P

FDV304P

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