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MMBTA14LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6
1 Publication Order Number:
MMBTA13LT1/D
MMBTA13L, SMMBTA13L,
MMBTA14L, SMMBTA14L
Darlington Amplifier
Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CES
30 Vdc
Collector−Base Voltage V
CBO
30 Vdc
Emitter−Base Voltage V
EBO
10 Vdc
Collector Current − Continuous I
C
300 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA13LT1G,
SMMBTA13LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA14LT1G,
SMMBTA14LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
COLLECTOR 3
BASE
1
EMITTER 2
SOT−23 (TO−236)
CASE 318
STYLE 6
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1x M G
G
1x = Device Code
x = M for MMBTA13LT1G,
SMMBTA13LT1G
x = N for MMBTA14LT1G,
SMMBTA14LT1G, T3G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
SMMBTA14LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 100 mAdc, V
BE
= 0)
V
(BR)CES
30 −
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
− 100
nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
− 100
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
h
FE
5000
10,000
10,000
20,000
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
V
CE(sat)
− 1.5
Vdc
Base−Emitter On Voltage
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
V
BE
− 2.0
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
125 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
T
= |h
fe
| • f
test
.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
www.onsemi.com
3
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
R
S
, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (kW)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
R
S
≈ 0
I
C
= 1.0 mA
100 mA
10 mA
BANDWIDTH = 1.0 Hz
I
C
= 1.0 mA
100 mA
10 mA
e
n
, NOISE VOLTAGE (nV)
i
n
, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
I
C
= 1.0 mA
V
T
, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
P1-P3P4-P6

MMBTA14LT1G

Mfr. #:
Buy MMBTA14LT1G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 300mA 30V NPN
Lifecycle:
New from this manufacturer.
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