HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 5 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time
Lower di/dt gate driver for better noise
immunity
Shut down input turns off both channels
8-Lead SOIC also available LEAD-FREE (PbF).
IR2302
(
S
)
& (PbF)
Data Sheet No. PD60207 Rev.A
www.irf.com 1
Packages







 



  

  

 

µ

  

 

µ

2106/2301//2108//2109/2302/2304 Feature Comparison
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
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

Description
The IR2302(S) are high voltage, high speed
power MOSFET and IGBT drivers with depen-
dent high and low side referenced output
channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers
feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to
600 volts.
8-Lead PDIP
IR2302
8-Lead SOIC
IR2302(S)
(Also available LEAD-FREE (PbF))
Typical Connection
IR2302











(Refer to Lead Assignments for
correct configuration). This/
These diagram(s) show elec-
trical connections only. Please refer to our Application Notes
and DesignTips for proper circuit board layout.
IR2302(
S
)
& (PbF)
2 www.irf.com
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
VB High side floating supply absolute voltage V
S
+ 5 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 5 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage (IN & SD) COM V
CC
T
A
Ambient temperature -40 150 °C
Symbol Definition Min. Max. Units
V
Symbol Definition Min. Max. Units
V
B
High side floating absolute voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Logic input voltage (IN & SD) COM - 0.3 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 Lead PDIP) 1.0
(8 Lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 Lead PDIP) 125
(8 Lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -50 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
V
°C/W
W
°C
IR2302(
S
)
& (PbF)
www.irf.com 3
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF, and T
A
= 25°C unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 550 750 950 V
S
= 0V
t
off
Turn-off propagation delay 200 280 V
S
= 0V or 600V
t
sd Shut-down propagation delay
200 280
MT Delay matching, HS & LS turn-on/off 0 50
t
r
Turn-on rise time 130 220 V
S
= 0V
t
f
Turn-off fall time 50 80 V
S
= 0V
DT Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
400 540 680
HO turn-off to LO turn-on (DT
HO-LO)
MDT Deadtime matching = DT
LO - HO
- DT
HO-LO
—0 60
nsec
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to
COM and are applicable to the respective input leads: IN and SD. The V
O
, I
O
and Ron parameters are referenced to COM
and are applicable to the respective output leads: HO and LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage for HO & logic “0” for LO 2.9 V
CC
= 10V to 20V
V
IL
Logic “0” input voltage for HO & logic “1” for LO 0.8 V
CC
= 10V to 20V
V
SD,TH+ SD input positive going threshold 2.9
—— V
CC
= 10V to 20V
V
SD,TH- SD input negative going threshold
——
0.8
V
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
0.8 1.4 I
O
= 20 mA
V
OL
Low level output voltage, V
O
0.3 0.6 I
O
= 20 mA
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 20 60 100 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 0.4 1.0 1.6 mA V
IN
= 0V or 5V
I
IN+
Logic “1” input bias current 5 20 IN = 5V, SD = 0V
I
IN-
Logic “0” input bias current 2 IN = 0V, SD = 5V
V
CCUV+
V
CC
and V
BS
supply undervoltage 3.3 4.1 5
V
BSUV+
positive going threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage 3 3.8 4.7
V
BSUV-
negative going threshold
V
CCUVH
Hysteresis 0.1 0.3
V
BSUVH
I
O+
Output high short circuit pulsed vurrent 120 200 V
O
= 0V, PW10 µs
I
O-
Output low short circuit pulsed current 250 350 V
O
= 15V,PW10 µs
V
µA
µA
V
mA

IR2302

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC DRIVER HALF-BRIDGE 8-DIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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