10
FN9257.2
March 7, 2008
times f
SW
). f
SW
represents the switching frequency of the
regulator. Change the numerical factor (0.7) below to
reflect desired placement of this pole. Placement of F
P2
lower in frequency helps reduce the gain of the
compensation network at high frequency, in turn reducing
the HF ripple component at the COMP pin and minimizing
resultant duty cycle jitter.
It is recommended that a mathematical model be used to
plot the loop response. Check the loop gain against the error
amplifier’s open-loop gain. Verify phase margin results and
adjust as necessary. Equation 13 describes the frequency
response of the modulator (G
MOD
), feedback compensation
(G
FB
) and closed-loop response (G
CL
):
COMPENSATION BREAK FREQUENCY EQUATIONS
Figure 8 shows an asymptotic plot of the DC/DC converter’s
gain vs frequency. The actual Modulator Gain has a high gain
peak dependent on the quality factor (Q) of the output filter,
which is not shown. Using the previously mentioned guidelines
should yield a compensation gain similar to the curve plotted.
The open loop error amplifier gain bounds the compensation
gain. Check the compensation gain at F
P2
against the
capabilities of the error amplifier. The closed loop gain, G
CL
, is
constructed on the log-log graph of Figure 8 by adding the
modulator gain, G
MOD
(in dB), to the feedback
compensation gain, G
FB
(in dB). This is equivalent to
multiplying the modulator transfer function and the
compensation transfer function and then plotting the
resulting gain.
A stable control loop has a gain crossing with close to a
-20dB/decade slope and a phase margin greater than 45°.
Include worst case component variations when determining
phase margin. The mathematical model presented makes a
number of approximations and is generally not accurate at
frequencies approaching or exceeding half the switching
frequency. When designing compensation networks, select
target crossover frequencies in the range of 10% to 30% of
the switching frequency, f
SW
.
Component Selection Guidelines
Output Capacitor Selection
An output capacitor is required to filter the output and supply
the load transient current. The filtering requirements are a
function of the switching frequency and the ripple current.
The load transient requirements are a function of the slew
rate (di/dt) and the magnitude of the transient load current.
These requirements are generally met with a mix of
capacitors and careful layout.
For applications that have transient load rates above 1A/ns,
high frequency capacitors initially supply the transient and
slow the current load rate seen by the bulk capacitors. The
bulk filter capacitor values are generally determined by the
ESR (effective series resistance) and voltage rating
requirements rather than actual capacitance requirements.
High frequency decoupling capacitors should be placed as
close to the power pins of the load as physically possible. Be
careful not to add inductance in the circuit board wiring that
could cancel the usefulness of these low inductance
components. Consult with the manufacturer of the load on
specific decoupling requirements.
Use only specialized low-ESR capacitors intended for
switching-regulator applications for the bulk capacitors.
The bulk capacitor’s ESR will determine the output ripple
voltage and the initial voltage drop after a high slew-rate
transient. An aluminum electrolytic capacitor's ESR value is
related to the case size with lower ESR available in larger
case sizes. However, the equivalent series inductance
(ESL) of these capacitors increases with case size and can
reduce the usefulness of the capacitor to high slew-rate
R
3
R
1
f
SW
F
LC
---------- -
1
--------------------
=
C
3
1
2π R
3
0.7 f
SW
⋅⋅
---------------------------------------------- -
=
(EQ. 12)
G
MOD
f()
D
MAX
V
IN
V
OSC
-------------------------------
1sf() ESR C⋅⋅+
1sf() ESR DCR+()C⋅⋅s
2
f() LC⋅⋅++
-----------------------------------------------------------------------------------------------------------
=
G
FB
f()
1sf() R
2
C
1
⋅⋅+
sf() R
1
C
1
C
2
+()⋅⋅
----------------------------------------------------
=
1sf() R
1
R
3
+()C
3
⋅⋅+
1sf() R
3
C
3
⋅⋅+()1sf() R
2
C
1
C
2
C
1
C
2
+
---------------------
⎝⎠
⎜⎟
⎛⎞
⋅⋅+
⎝⎠
⎜⎟
⎛⎞
-------------------------------------------------------------------------------------------------------------------------
G
CL
f() G
MOD
f() G
FB
f()=
where s f(), 2π fj⋅⋅=
(EQ. 13)
F
Z1
1
2π R
2
C
1
⋅⋅
------------------------------ -
=
F
Z2
1
2π R
1
R
3
+()C
3
⋅⋅
-------------------------------------------------
=
F
P1
1
2π R
2
C
1
C
2
C
1
C
2
+
---------------------
⋅⋅
---------------------------------------------
=
F
P2
1
2π R
3
C
3
⋅⋅
------------------------------ -
=
(EQ. 14)
0
F
P1
F
Z2
OPEN LOOP E/A GAIN
F
Z1
F
P2
F
LC
F
CE
COMPENSATION GAIN
GAIN
FREQUENCY
MODULATOR GAIN
FIGURE 8. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN
CLOSED LOOP GAIN
20
R2
R1
--------
⎝⎠
⎛⎞
log
LOG
LOG
F
0
G
MOD
G
FB
G
CL
20
D
MAX
V
IN
V
OSC
----------------------------------log
ISL8104
11
FN9257.2
March 7, 2008
transient loading. Unfortunately, ESL is not a specified
parameter. Work with your capacitor supplier and measure
the capacitor’s impedance with frequency to select a
suitable component. In most cases, multiple electrolytic
capacitors of small case size perform better than a single
large case capacitor.
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter’s response
time to the load transient. The inductor value determines the
converter’s ripple current and the ripple voltage is a function
of the ripple current. The ripple voltage and current are
approximated by Equation 15:
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce
the converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
ISL8104 will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient load is different for the
application of load and the removal of load. Equation 16
gives the approximate response time interval for application
and removal of a transient load:
where: I
TRAN
is the transient load current step, t
RISE
is the
response time to the application of load, and t
FALL
is the
response time to the removal of load. With a +5V input
source, the worst case response time can be either at the
application or removal of load and dependent upon the
output voltage setting. Be sure to check both of these
equations at the minimum and maximum output levels for
the worst case response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q1 turns on. Place the
small ceramic capacitors physically close to the MOSFETs
and between the drain of Q
1
and the source of Q
2
.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select a bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage, a voltage rating of 1.5 times greater is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through hole design, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX
or equivalent) may be needed. For surface mount designs,
solid tantalum capacitors can be used, but caution must be
exercised with regard to the capacitor surge current rating.
These capacitors must be capable of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge current tested.
MOSFET Selection/Considerations
The ISL8104 requires at least 2 N-Channel power MOSFETs.
These should be selected based upon r
DS(ON)
, gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss
components; conduction loss and switching loss. At a
300kHz switching frequency, the conduction losses are the
largest component of power dissipation for both the top-side
and the bottom-side MOSFETs. These losses are distributed
between the two MOSFETs according to duty factor (see the
following equations). Only the top-side MOSFET exhibits
switching losses, since the schottky rectifier clamps the
switching node before the synchronous rectifier turns on.
Equation 17 assumes linear voltage-current transitions and
does not adequately model power loss due to the
reverse-recovery of the bottom-side MOSFETs body diode.
The gate-charge losses are dissipated by the ISL8104 and
don't heat the MOSFETs. However, large gate-charge
increases the switching interval, t
SW
which increases the
top-side MOSFET switching losses. Ensure that both
MOSFETs are within their maximum junction temperature at
high ambient temperature by calculating the temperature
rise according to package thermal-resistance specifications.
A separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
ΔV
OUT
= ΔI x ESR
ΔI =
V
IN
- V
OUT
Fs x L
--------------------------------
V
OUT
V
IN
----------------
(EQ. 15)
t
FALL
L
O
I
TRAN
×
V
OUT
-------------------------------
=t
RISE
L
O
I
TRAN
×
V
IN
V
OUT
------------------------------- -
=
(EQ. 16)
P
top-side
= I
O
2
x r
DS(ON)
x D +
1
2
Io x V
IN
x t
SW
x f
SW
P
bottom-side
= I
O
2
x r
DS(ON)
x (1 - D)
where: D is the duty cycle = V
O
/ V
IN
,
t
SW
is the switching interval, and
f
SW
is the switching frequency.
(EQ. 17)
ISL8104
12
FN9257.2
March 7, 2008
Standard-gate MOSFETs are normally recommended for
use with the ISL8104. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
top-side gate drive level, and the MOSFETs absolute gate-
to-source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the top-side gate drive (BOOT pin) supplied
by a bootstrap circuit from +14V. The boot capacitor, C
BOOT
develops a floating supply voltage referenced to the LX pin.
This supply is refreshed each cycle to a voltage of +14V less
the boot diode drop (V
D
) when the bottom-side MOSFET, Q
2
turns on. A MOSFET can only be used for Q
1
if the
MOSFETs absolute gate-to-source voltage rating exceeds
the maximum voltage applied to +14V. For Q
2
, a logic-level
MOSFET can be used if its absolute gate-to-source voltage
rating also exceeds the maximum voltage applied to +14V.
Figure 10 shows the top-side gate drive supplied by a direct
connection to +14V. This option should only be used in
converter systems where the main input voltage is +5VDC or
less. The peak top-side gate-to-source voltage is
approximately +14V less the input supply. For +5V main
power and +14VDC for the bias, the gate-to-source voltage
of Q
1
is 9V. A logic-level MOSFET is a good choice for Q
1
and a logic-level MOSFET can be used for Q
2
if its absolute
gate-to-source voltage rating exceeds the maximum voltage
applied to PVCC. This method reduces the number of
required external components, but does not provide for
immunity to phase node ringing during turn on and may
result in lower system efficiency.
Schottky Selection
Rectifier D2 is a clamp that catches the negative inductor
swing during the dead time between turning off the bottomside
MOSFET and turning on the top-side MOSFET. The diode
must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is acceptable to omit
the diode and let the body diode of the bottom-side MOSFET
clamp the negative inductor swing, but efficiency could slightly
decrease as a result. The diode's rated reverse breakdown
voltage must be greater than the maximum input voltage.
+14V
PGND
ISL8104
GND
BGATE
TGATE
BOOT
+1.2V TO +14V
FIGURE 9. TOP-SIDE GATE DRIVE - BOOTSTRAP OPTION
NOTE:
V
G-S
V
CC
- V
D
NOTE:
V
G-S
PVCC
C
BOOT
D
BOOT
Q1
Q2
PVCC
+14V
D2
+
-
V
D
+
-
LX
+14V
PGND
BGATE
TGATE
BOOT
+5V OR LESS
FIGURE 10. TOP-SIDE GATE DRIVE - DIRECT V
CC
DRIVE
OPTION
NOTE:
V
G-S
V
CC
- 5V
NOTE:
V
G-S
PVCC
Q1
Q2
PVCC
+14V
D2
ISL8104
GND
+
-
ISL8104

ISL8104IBZ

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Switching Controllers PWM CNTRLR DDRG 14LD N IND GENER
Lifecycle:
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