CM300DY-24A Datasheet CM300DY-24A | P1-P3

Feb. 2009

1

C2E1

E2

E2 G2G1 E1

C1

CIRCUIT DIAGRAM

TAB #110 t=0.5

18

74

18

7

18

21.5

242525

6 61517.5

30

（20）

（5.2）

（8.5）

（13.7）

30

62

48

（7）

（24）

（7.5）（7.5）

（7）

±0.25

108

93±0.25

4

14 14 14 2.8

+1.0

–0.5

C2E1 E2 C1

G1

E1

E2

G2

LABEL

4-φ6.5 MOUNTING HOLES

3-M6 NUTS

8.5

7.5

22.2

CM300DY-24A

APPLICATION

AC drive inverters & Servo controls, etc

MITSUBISHI IGBT MODULES

CM300DY-24A

HIGH POWER SWITCHING USE

¡IC ...................................................................300A

¡V

CES ......................................................... 1200V

¡Insulated Type

¡2-elements in a pack

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009

2

V

CE = VCES, VGE = 0V

±V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C

V

CC = 600V, IC = 300A, VGE = 15V

V

CC = 600V, IC = 300A

V

GE = ±15V

R

G = 1.0Ω, Inductive load

I

E = 300A

I

E = 300A, VGE = 0V

IGBT part (1/2 module)

*1

FWDi part (1/2 module)

*1

Case to heat sink, Thermal compound Applied (1/2 module)

*1,*2

IC = 30mA, VCE = 10V

I

C = 300A, VGE = 15V

V

CE = 10V

V

GE = 0V

1200

±20

300

600

300

600

1890

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

400

MITSUBISHI IGBT MODULES

CM300DY-24A

HIGH POWER SWITCHING USE

V

A

W

°C

Vrms

N • m

g

1

0.5

3.0

—

47

4

0.9

—

550

180

600

350

250

—

3.8

0.066

0.12

—

16

mA

µA

nF

nC

ns

µC

V

K/W

Ω

—

2.1

2.4

—

1350

—

9.0

—

0.02

—

1.0

7V

V

68

ns

ICES

IGES

Cies

Coes

Cres

QG

td(on)

tr

td(off)

tf

trr (

Note 1

)

Qrr (

Note 1

)

VEC(

Note 1

)

Rth(j-c)Q

R

th(j-c)R

R

th(c-f)

RG

Symbol

Parameter

V

GE(th)

VCE(sat)

*

1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.

*

2 : Typical value is measured by using thermally conductive grease of

λ

= 0.9[W/(m • K)].

Note 1. I

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (T

j) does not exceed Tjmax rating.

3. Junction temperature (T

j) should not increase beyond 150°C.

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

G-E Short

C-E Short

DC, T

C = 80°C

*1

Pulse (Note 2)

T

C = 25°C

*1

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M6 screw

Mounting M6 screw

Typical value

Symbol Parameter

Collector current

Emitter current

Torque strength

Conditions UnitRatings

V

CES

VGES

IC

ICM

IE (

Note 1

)

IEM (

Note 1

)

PC (

Note 3

)

Tj

Tstg

Viso

—

Unit

Typ.

Limits

Min. Max.

Test conditions

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Collector cutoff current

Gate-emitter threshold

voltage

Gate leakage current

Collector-emitter saturation

voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

External gate resistance

Thermal resistance

Feb. 2009

3

MITSUBISHI IGBT MODULES

CM300DY-24A

HIGH POWER SWITCHING USE

600

500

200

100

400

300

0

0 46810

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT I

C

(A)

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

T

j

= 25°C

11

12

10

9

V

GE

=

20V

2

15

13

4

3

2

1

0

0 200 600400 500300

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE (sat)

(V)

COLLECTOR CURRENT I

C

(A)

V

GE

= 15V

T

j

= 25°C

T

j

= 125°C

100

10

8

6

4

2

0

2012 146810 16 18

GATE-EMITTER VOLTAGE V

GE

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE (sat)

(V)

T

j

= 25°C

I

C

= 120A

I

C

= 600A

I

C

= 300A

10

1

2

3

5

7

10

2

3

5

7

10

3

012 435

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

EMITTER CURRENT I

E

(A)

EMITTER-COLLECTOR VOLTAGE V

EC

(V)

T

j

= 25°C

T

j

= 125°C

10

–1

10

0

10

–1

2

3

5

7

10

1

2

3

5

7

10

2

3

5

7

2

10

0

357 2

10

1

357 2

10

2

357

CAPACITANCE–V

CE

CHARACTERISTICS

(TYPICAL)

CAPACITANCE C

ies

, C

oes

, C

res

(nF)

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

C

ies

C

oes

C

res

V

GE

= 0V

10

1

10

2

10

3

2

3

5

7

2

3

5

7

10

1

10

2

57

10

3

23 5723

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

SWITCHING TIME (ns)

COLLECTOR CURRENT I

C

(A)

Conditions:

V

CC

= 600V

V

GE

= ±15V

R

G

= 1.0Ω

T

j

= 125°C

Inductive load

t

d(off)

t

d(on)

t

f

t

r

PERFORMANCE CURVES

CM300DY-24A

CM300DY-24A

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