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SUM85N03-06P-E3

P1-P3P4-P6
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D New Package with Low Thermal Resistance
D 100% R
g
Tested
APPLICATIONS
D Buck Converter
− High Side
− Low Side
D Synchronous Rectifier
− Secondary Rectifier
SUM85N03-06P
Vishay Siliconix
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
www.vishay.com
1
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V) r
DS(on)
(W) I
D
(A)
30
0.006 @ V
GS
= 10 V 85
30
0.009 @ V
GS
= 4.5 V 77
D
G
S
N-Channel MOSFET
TO-263
SDG
Top View
Ordering Information: SUM85N03-06P
SUM85N03-06P-E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
Gate-Source Voltage V
GS
"20
V
Continuous Drain Current (T
J
= 175
_
C)
T
C
= 25_C
I
D
85
Continuous Drain Current (T
J
= 175_C)
T
C
= 100_C
I
D
67
A
Pulsed Drain Current I
DM
200
A
Avalanche Current I
AR
45
Repetitive Avalanche Energy
a
L = 0.1 mH E
AR
101 mJ
Maximum Power Dissipation
a
T
C
= 25_C
P
D
100
b
W
Maximum Power Dissipation
a
T
A
= 25_C
c
P
D
3.75
W
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
JtitAbit
PCB Mount
c
R
40
Junction-to-Ambient
Free Air
R
thJA
62.5
_C/W
Junction-to-Case R
thJC
1.5
C/W
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
SUM85N03-06P
Vishay Siliconix
www.vishay.com
2
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA 30
V
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA 1 3.0
V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100 nA
V
DS
= 30 V, V
GS
= 0 V 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C 50
mA
g
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175_C 250
m
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V 120 A
V
GS
= 10 V, I
D
= 20 A 0.0045 0.006
Drain Source On State Resistance
a
r
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C 0.0085
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C 0.011
W
V
GS
= 4.5 V, I
D
= 20 A
0.0072 0.009
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A 20 S
Dynamic
b
Input Capacitance C
iss
3100
Output Capacitance C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
565 pF
Reverse Transfer Capacitance C
rss
255
Gate-Resistance R
g
0.5 1.9 3.1 W
Total Gate Charge
b
Q
g
48 65
Gate-Source Charge
b
Q
gs
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
10
nC
Gate-Drain Charge
b
Q
gd
7.5
Turn-On Delay Time
b
t
d(on)
12 20
Rise Time
b
t
r
V
DD
= 15 V, R
L
= 0.3 W
12 20
ns
Turn-Off Delay Time
b
t
d(off)
,
.
I
D
^ 50 A, V
GEN
= 10 V, R
g
= 2.5 W
30 45
ns
Fall Time
b
t
f
10 15
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current I
S
100
A
Pulsed Current I
SM
200
A
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
1.2 1.5 V
Reverse Recovery Time t
rr
I
F
= 50 A, di/dt = 100 A/ms
35 70 ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
SUM85N03-06P
Vishay Siliconix
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
3000
3500
4000
0 6 12 18 24 30
0
2
4
6
8
10
0 1020304050
0
20
40
60
80
100
120
0 20406080100
0.0000
0.0025
0.0050
0.0075
0.0100
0.0125
0.0150
0 20 40 60 80 100 120
0
20
40
60
80
100
120
012345
0
50
100
150
200
250
0246810
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
V
DS
− Drain-to-Source Voltage (V) V
GS
− Gate-to-Source Voltage (V)
− Drain Current (A)I
D
− Gate-to-Source Voltage (V)
Q
g
− Total Gate Charge (nC)
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
C − Capacitance (pF)
V
GS
− Transconductance (S)g
fs
25_C
−55_C
5 V
T
C
= 125_C
V
DS
= 15 V
I
D
= 50 A
V
GS
= 10 thru 6 V
V
GS
= 10 V
C
rss
T
C
= −55_C
25_C
125_C
V
GS
= 4.5 V
− On-Resistance (r
DS(on)
W )
− Drain Current (A)I
D
I
D
− Drain Current (A)
C
iss
C
oss
4 V
2, 3 V
P1-P3P4-P6

SUM85N03-06P-E3

Mfr. #:
Buy SUM85N03-06P-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SUM90N04-3M3P-E3
Lifecycle:
New from this manufacturer.
Delivery:
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