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SZSM05T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 7
1 Publication Order Number:
SM05T1/D
SM05T1GSeries,
SZSM05T1G
Transient Voltage
Suppressor Diode Array
SOT−23 Dual Common Anode Diodes
for ESD Protection
These dual monolithic silicon TVS diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Specification Features:
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 5.0 V to 24 V
• Peak Power − 300 Watt (8 X 20 ms)
• Low Leakage
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics:
CASE:
Void-Free, Transfer-Molded, Thermosetting Plastic Case
FINISH: Corrosion Resistant Finish, Easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to Order the 7 Inch/3,000 Unit Reel
Replace the “T1” with “T3” in the Device Number to Order the
13 Inch/10,000 Unit Reel
SOT−23
CASE 318
STYLE 12
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SM05T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SM12T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
xxM MG
G
xxM = Device Code
xx = 05, 12, 15, 24, 36
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
SM15T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SM24T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SM36T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SZSM05T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
www.onsemi.com
SM05T1G Series, SZSM05T1G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 20 ms (Note 1) @ T
L
≤ 25°C
P
pk
300 W
IEC 61000−4−2 (ESD)
Air
Contact
±15
±8.0
kV
IEC 61000−4−4 (EFT) 40 A
IEC 61000−4−5 (Lightening) 12 A
Total Power Dissipation on FR−5 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
225
1.8
556
°mW°
mW/°C
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
R
q
JA
300
2.4
417
°mW
mW/°C
°C/W
Junction and Storage Temperature Range T
J
, T
stg
− 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 3
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
NOTE: Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Device*
Device
Marking
V
RWM
I
R
@ V
RWM
V
BR
, Breakdown Voltage
I
T
V
C
@
I
PP
=
1 Amp
Max I
PP
(Note 4)
Typical
Capacitance
(Volts) (pF)
(Volts)
(mA)
Min Max
mA
(Volts) (Amps)
Pin 1 to 3
@ 0 Volts
SM05T1G 05M 5 10 6.2 7.3 1.0 9.8 17 225
SM12T1G 12M 12 1.0 13.3 15.75 1.0 19 12 95
SM15T1G 15M 15 1.0 16.7 19.6 1.0 24 10 100
SM24T1G 24M 24 1.0 26.7 31.35 1.0 43 5.0 60
SM36T1G 36M 36 1.0 40.0 46.95 1.0 60 4.0 45
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. 8 × 20 ms pulse waveform per Figure 3
*Include SZ-prefix devices where applicable.
SM05T1G Series, SZSM05T1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0.1 10
10
Figure 1. Non−Repetitive Peak Pulse Power
versus Pulse Time
1
t
p
, PULSE DURATION (ms)
100 1000
1
0.1
0.01
Figure 2. Steady State Power Derating Curve
P
PP
, PEAK PULSE POWER (kW)
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
P
D
, POWER DISSIPATION (mW)
100
Figure 3. 8 × 20 ms Pulse Waveform
Figure 4. Typical Diode Capacitance (SM05)
01 524
250
130
90
BIAS VOLTAGE (VOLTS)
90
80
70
60
50
40
30
20
10
0
020406080
t, TIME (ms)
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
% OF PEAK PULSE CURRENT
PEAK VALUE I
RSM
@ 8 ms
C, CAPACITANCE (pF)
210
170
Figure 5. Typical Diode Capacitance (SM12)
015812
100
90
40
30
20
10
0
BIAS VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
80
70
60
50
3
P1-P3P4-P5

SZSM05T1G

Mfr. #:
Buy SZSM05T1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors ZEN MONOLITHIC DUAL
Lifecycle:
New from this manufacturer.
Delivery:
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