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SPZT651T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 10
1 Publication Order Number:
PZT651T1/D
PZT651
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT−223 package which is designed for medium power surface
mount applications.
SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
Features
• High Current
• The SOT−223 Package can be Soldered Using Wave or Reflow
• PNP Complement is PZT751T1G
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
60 Vdc
Collector−Base Voltage V
CBO
80 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
2.0 Adc
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
P
D
0.8
6.4
W
mW/°C
Storage Temperature Range T
stg
−65 to 150 °C
Junction Temperature T
J
150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance from
Junction−to−Ambient in Free Air
R
q
JA
156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
MARKING DIAGRAM
SOT−223
CASE 318E−04
STYLE 1
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
SOT−223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2, 4
BASE
1
EMITTER 3
(Note: Microdot may be in either location)
1
AYW
651 G
G
Device Package Shipping
†
ORDERING INFORMATION
PZT651T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SPZT651T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
1
2
3
4
PZT651
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60 −
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
80 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 −
Vdc
Base−Emitter Cutoff Current
(V
EB
= 4.0 Vdc)
I
EBO
− 0.1
mAdc
Collector−Base Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
− 100
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 2.0 Vdc)
h
FE
75
75
75
40
−
−
−
−
−
Collector−Emitter Saturation Voltages
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
CE(sat)
−
−
0.5
0.3
Vdc
Base−Emitter Voltages
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
− 1.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
BE(sat)
− 1.2
Vdc
Current−Gain — Bandwidth
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
75 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%
PZT651
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
10
h
FE
, DC CURRENT GAIN
300
0
V
CE
= 2.0 V
T
J
= 125°C
25°C
-55°C
30
60
90
120
150
180
210
240
270
20 50 100 200 500 1.0 A 2.0 A 4.0 A
I
C
, COLLECTOR CURRENT (mA)
50
V, VOLTAGE (VOLTS)
2.0
0
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 2.0 V
V
CE(sat)
@ I
C
/I
B
= 10
Figure 2. On Voltages
1.8
1.6
1.4
1.2
1.0
0.4
0.8
0.6
0.2
100 200 500 1.0 A 2.0 A 4.0 A
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.05
1.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
T
J
= 25°C
I
C
= 10 mA I
C
= 100 mA I
C
= 500 mA I
C
= 2.0 A
P1-P3P4-P4

SPZT651T1G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS 60V XSTR NPN SPL
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