1N5820 R0G

1N5820 - 1N5822
CREAT BY ART
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL UNIT
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
C
J
pF
R
θJA
°C/W
T
J
°C
T
STG
°C
Document Number: D1307015 Version: H15
0.5
- 55 to +125
Typical Junction Capacitance (Note 2)
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Taiwan Semiconductor
1N5820 1N5821 1N5822
0.475 0.500
- 55 to +125Storage temperature range
Operating junction temperature range
40Typical thermal resistance
10
200
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=100°C
Maximum average forward rectified current
20 30 40
14 21 28
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
Maximum instantaneous forward voltage (Note 1)
@ 3 A
V
F
V
20 30 40
0.525
3
Polarity: Indicated by cathode band
Weight: 1.10g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
Note 1: Pulse test with PW=300 μs, 1% duty cycle
mA
I
R
70 A
3A, 20V - 40V Schottk
y
Barrier Rectifiers
DO-201AD
MECHANICAL DATA
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Case: DO-201AD
FEATURES
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: D1307015 Version: H15
1N58201N5820HA0G
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
HA0 G
AEC-Q101 qualified
Green compound
B0 DO-201AD 500 / Bulk packing
X0 DO-201AD Forming
PACKAGE PACKING
H
A0
G
DO-201AD 500 / Ammo box
R0 DO-201AD 1,250 / 13" Paper reel
1N5820 - 1N5822
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
1N582x
(Note 1)
PACKING
CODE
PACKING CODE
SUFFIX
(*)
Note 1: "x" defines voltage from 20V (1N5820) to 40V (1N5822)
EXAMPLE
PREFERRED P/N
RATINGS AND CHARACTERISTICS CURVES
0
1
2
3
4
0 20 40 60 80 100 120 140
AVERAGE FORWARD A
CURRENT (A)
LEAD TEMPERATURE (
o
C)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OF
INDUCTIVE LOAD
10
20
30
40
50
60
70
80
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.001
0.01
0.1
1
10
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE A
CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
T
J
=100°C
T
J
=25°C
T
J
=75°C
0.1
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
INSTANTANEOUS FORWARD A
CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300μs
1% Duty Cycle
1N5820
1N5821-1N5822
Min Max Min Max
A 5.00 5.60 0.197 0.220
B 1.20 1.30 0.048 0.052
C 25.40 - 1.000 -
D 8.50 9.50 0.335 0.375
E 25.40 - 1.000 -
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: D1307015 Version: H15
DO-201AD
MARKING DIAGRAM
DIMENSIONS
1N5820 - 1N5822
Taiwan Semiconductor
DIM.
Unit (mm) Unit (inch)
10
100
1000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vslg=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (°C/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE

1N5820 R0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers 3A, 20V, AXIAL SCHOTTKY RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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