OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

HFA16PB120

P1-P3P4-P6P7-P7
Document Number: 93071 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 20-Jul-09 1
HEXFRED
®
Ultrafast Soft Recovery Diode, 16 A
HFA16PB120
Vishay High Power Products
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA16PB120 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 16 A continuous current, the
HFA16PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA16PB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
V
R
1200 V
V
F
at 16 A at 25 °C 3.0 V
I
F(AV)
16 A
t
rr
(typical) 30 ns
T
J
(maximum) 150 °C
Q
rr
(typical) 260 nC
dI
(rec)M
/dt (typical) at 125 °C 76 A/µs
I
RRM
(typical) 5.8 A
TO-247AC modified
Cathode
to base
1
3
Cathode
Anode
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
1200 V
Maximum continuous forward current I
F
T
C
= 100 °C 16
ASingle pulse forward current I
FSM
190
Maximum repetitive forward current I
FRM
64
Maximum power dissipation P
D
T
C
= 25 °C 151
W
T
C
= 100 °C 60
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150 °C
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 93071
2 Revision: 20-Jul-09
HFA16PB120
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 16 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 16 A
See fig. 1
-2.53.0
I
F
= 32 A - 3.2 3.93
I
F
= 16 A, T
J
= 125 °C - 2.3 2.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-0.7520
µA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 375 2000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 27 40 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/µs, V
R
= 30 V - 30 -
nst
rr1
T
J
= 25 °C
I
F
= 16 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
- 90 135
t
rr2
T
J
= 125 °C - 164 245
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 5.8 10
A
I
RRM2
T
J
= 125 °C - 8.3 15
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 260 675
nC
Q
rr2
T
J
= 125 °C - 680 1838
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 120 -
A/µs
dI
(rec)M
/dt2 T
J
= 125 °C - 76 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
- - 0.83
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.50 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC modified (JEDEC) HFA16PB120
Document Number: 93071 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 20-Jul-09 3
HFA16PB120
HEXFRED
®
Ultrafast Soft Recovery Diode, 16 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
02468
0.1
1
1000
10
93071_01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0 200 400 600 1000800 1200
0.01
0.1
1
10
100
1000
93071_02
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
1 10 100 1000 10 000
1
1000
100
10
93071_03
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
.
93071_04
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

HFA16PB120

Mfr. #:
Buy HFA16PB120
Manufacturer:
Vishay
Description:
DIODE GEN PURP 1.2KV 16A TO247AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet