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NRVBA1H100T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
April, 2017 − Rev. 3
1 Publication Order Number:
MBRA1H100/D
MBRA1H100, NRVBA1H100
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Low Forward Voltage Drop
• Guardring for Stress Protection
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Lead Indicated by Polarity Band
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
• Device Meets MSL 1 Requirements
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 100 VOLTS
MARKING DIAGRAMS
SMA
CASE 403D
A110
AYWWG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRA1H100T3G SMA
(Pb−Free)
5,000 /
Tape & Reel
Cathode Anode
A110 = Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
12
NRVBA1H100T3G* SMA
(Pb−Free)
5,000 /
Tape & Reel
www.onsemi.com
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA1H100, NRVBA1H100
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(T
L
= 167°C)
I
O
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50
A
Storage and Operating Junction Temperature Range (Note 1) T
stg
, T
J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
14 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
75 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
280 °C/W
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 6 mm
2
copper, 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
V
F
0.76
0.84
0.61
0.68
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
40
0.5
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
MBRA1H100, NRVBA1H100
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.80.60.40 0.2
0.1
1
10
100
1.61.41.21.00.80.60.4
0.1
1
10
100
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
V
R
, REVERSE VOLTAGE (V)
908060503020100
0.00001
0.0001
0.001
0.01
0.1
1
10
I
F
, FORWARD CURRENT (A)
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (mA)
1.2 1.41.0
150°C
125°C
25°C
40 70 100
150°C
125°C
25°C
Figure 5. Current Derating
T
L
, LEAD TEMPERATURE (°C)
165150145140135
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
dc
Square Wave
155 170160
R
q
JL
= 14°C/W
I
O
, AVERAGE FORWARD CURRENT (A)
10.80.60.40.20
0
0.2
0.4
0.6
0.8
1.0
P
FO
, AVERAGE POWER DISSIPATION (W)
T
J
= 175°C
dc
Square Wave
Figure 6. Forward Power Dissipation
0.20
150°C
125°C
25°C
175
1.61.41.2
V
R
, REVERSE VOLTAGE (V)
908060503020100
I
R
, REVERSE CURRENT (mA)
40 70 10
0
0.00001
0.0001
0.001
0.01
0.1
1
10
150°C
125°C
25°C
P1-P3P4-P5

NRVBA1H100T3G

Mfr. #:
Buy NRVBA1H100T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1 A, 100 V SCHOTTKY RECT
Lifecycle:
New from this manufacturer.
Delivery:
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