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ZXMN3G32DN8TA

P1-P3P4-P6P7-P8
ZXMN3G32DN8
Issue 1 - January 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
30 V I
D
= 250µA, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
0.5 µAV
DS
= 30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1.0 3.0 V I
D
= 250µA, V
DS
=V
GS
Static Drain-Source
On-State Resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%.
R
DS(on)
0.028
0.045
Ω
Ω
V
GS
= 10V, I
D
= 6.0A
V
GS
= 4.5V, I
D
= 4.9A
Forward
Transconductance
(*)(†)
g
fs
12 S V
DS
= 15V, I
D
= 6.0A
Dynamic
(†)
(†) For design aid only, not subject to production testing
Input Capacitance C
iss
472 pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
178 pF
Reverse Transfer
Capacitance
C
rss
65 pF
Switching
(‡)(†)
(‡) Switching characteristics are independent of operating junction temperature.
Tur n-On -Delay Time t
d(on)
2.5 ns
V
DD
= 15V, I
D
= 1A
R
G
≅
6.0Ω, V
GS
=10V
Rise Time t
r
3.1 ns
Turn-Off Delay Time t
d(off)
14 ns
Fall Time t
f
9.7 ns
Total Gate Charge Q
g
10.5 nC V
DS
= 15V, V
GS
= 10V
I
D
= 6A
Gate-Source Charge Q
gs
1.86 nC
Gate Drain Charge Q
gd
2.3 nC
Source-drain diode
Diode Forward Voltage
(*)
V
SD
0.68 1.2 V T
j
=25°C, I
S
= 1.7A,
V
GS
=0V
ZXMN3G32DN8
Issue 1 - January 2008 5 www.zetex.com
© Zetex Semiconductors plc 2008
Typical characteristics
ZXMN3G32DN8
Issue 1 - January 2008 6 www.zetex.com
© Zetex Semiconductors plc 2008
Test circuits
P1-P3P4-P6P7-P8

ZXMN3G32DN8TA

Mfr. #:
Buy ZXMN3G32DN8TA
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Dual N-Channel Enhance. Mode MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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