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SI8810EDB-T2-E1

P1-P3P4-P6P7-P8
Si8810EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
1
Document Number: 62829
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 20 V (D-S) MOSFET
Marking Code: xx = AJ
xxx = Date/Lot traceability code
Ordering Information:
Si8810EDB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.357 mm height
• Typical ESD protection 2000 V (HBM)
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Portable devices such as cell phones,
smart phones, and tablet PCs
- Load switch
- Small signal switch
- High speed switching
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) MAX. I
D
(A)
a
Q
g
(TYP.)
20
0.072 at V
GS
= 4.5 V 2.9
3 nC
0.079 at V
GS
= 2.5 V 2.8
0.092 at V
GS
= 1.8 V 2.6
0.125 at V
GS
= 1.5 V 2.2
MICRO FOOT
®
0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
N-Channel MOSFET
S
D
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
2.9
a
A
T
A
= 70 °C 2.3
a
T
A
= 25 °C 2.1
b
T
A
= 70 °C 1.7
b
Pulsed Drain Current (t = 300 μs) I
DM
15
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
S
0.7
a
T
A
= 25 °C 0.4
b
Maximum Power Dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a, d
t ≤ 5 s R
thJA
105 135
°C/W
Maximum Junction-to-Ambient
b, e
200 260
Si8810EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
2
Document Number: 62829
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 20 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 μA
-21-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
--2.7-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.4 - 0.9 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V - - ± 0.5
μA
V
DS
= 0 V, V
GS
= ± 8 V - - ± 5
Zero Gate Voltage Drain Current I
DSS
V
DS
= 20 V, V
GS
= 0 V - - 1
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 4.5 V 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 1 A - 0.058 0.072
Ω
V
GS
= 2.5 V, I
D
= 1 A - 0.063 0.079
V
GS
= 1.8 V, I
D
= 1 A - 0.072 0.092
V
GS
= 1.5 V, I
D
= 0.5 A - 0.080 0.125
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 1 A - 12 - S
Dynamic
b
Input Capacitance C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
- 245 -
pFOutput Capacitance C
oss
-55-
Reverse Transfer Capacitance C
rss
-25-
Total Gate Charge Q
g
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1 A - 5.2 8
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1 A
-34.5
Gate-Source Charge Q
gs
-0.35-
Gate-Drain Charge Q
gd
-0.45-
Gate Resistance R
g
f = 1 MHz - 5 - Ω
Turn-On Delay Time t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, R
g
= 1 Ω
-715
ns
Rise Time t
r
-1225
Turn-Off Delay Time t
d(off)
-2550
Fall Time t
f
-715
Turn-On Delay Time t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 8 V, R
g
= 1 Ω
-510
Rise Time t
r
-1020
Turn-Off Delay Time t
d(off)
-1530
Fall Time t
f
-715
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - - 0.7
A
Pulse Diode Forward Current I
SM
--15
Body Diode Voltage V
SD
I
S
= 1 A, V
GS
= 0 V - 0.7 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= 1 A, dI/dt = 100 A/μs, T
J
= 25 °C
-1120ns
Body Diode Reverse Recovery Charge Q
rr
-510nC
Reverse Recovery Fall Time t
a
-7-
ns
Reverse Recovery Rise Time t
b
-4-
Si8810EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
3
Document Number: 62829
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
0.00
0.50
1.00
1.50
2.00
2.50
0 4 8 12 16
I
GSS
- Gate Current (mA)
V
GS
- Gate-Source Voltage (V)
T
J
= 25 °C
GS
0.000
0.040
0.080
0.120
0.160
0.200
0 3 6 9 12 15
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 1.5 V
V
GS
= 2.5 V
V
GS
= 4.5 V
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
0 4 8 12 16
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P8

SI8810EDB-T2-E1

Mfr. #:
Buy SI8810EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
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