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STB50NF25

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics STB50NF25 - STP50NF25
4/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0 250 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 22 A 0.055 0.069 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
=10 V, I
D
= 22 A 20 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
2670
465
70.5
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=200 V, I
D
= 45 A
V
GS
=10 V
(see Figure 14)
68.2
12.2
33.4
nC
nC
nC
R
G
Gate input resistance
f=1 MHz Gate Bias, Bias=0
Test signal level=20 mV
open drain
1.1 Ω
STB50NF25 - STP50NF25 Electrical characteristics
5/14
Table 7. Switching times
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 125 V, I
D
= 22 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
45
26
ns
ns
t
d(off)
t
f
Off-voltage rise time
Fall time
V
DD
= 125 V, I
D
= 22 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
63
20
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ Max Unit
I
SD
I
SDM
Source-drain current
Source-drain current (pulsed)
45
180
A
A
V
SD
Forward on voltage I
SD
= 45 A, V
GS
= 0 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 45 A, di/dt = 100 A/µs,
V
DD
= 60 V (see Figure 18)
198
1.5
15
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 45 A, di/dt = 100 A/µs,
V
DD
= 60 V, Tj = 150 °C
(see Figure 18)
256
2.2
17
ns
µC
A
Electrical characteristics STB50NF25 - STP50NF25
6/14
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
VDSS
vs temperature Figure 7. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P14

STB50NF25

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Manufacturer:
STMicroelectronics
Description:
MOSFET Hi Vltg Pwr SCHOTTKY RECTIF
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