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2N6388

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1 Publication Order Number:
2N6387/D
2N6387, 2N6388
Plastic Medium-Power
Silicon Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
• High DC Current Gain − h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) − 2N6387
= 80 Vdc (Min) − 2N6388
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc − 2N6387, 2N6388
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
Collector−Emitter Voltage 2N6387
2N6388
V
CEO
60
80
Vdc
Collector−Base Voltage 2N6387
2N6388
V
CB
60
80
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous
− Peak
I
C
10
15
Adc
Base Current I
B
250 mAdc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
65
0.52
W
W/°C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
2.0
0.016
W
W/°C
Operating and Storage Junction,
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.92
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 − 80 VOLTS
TO−220
CASE 221A
STYLE 1
1
2
3
4
www.onsemi.com
2N638x = Device Code
x = 7 or 8
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MARKING DIAGRAM
2N638xG
AYWW
2N6388G TO−220
(Pb−Free)
50 Units / Rail
Device Package Shipping
2N6387G TO−220
(Pb−Free)
50 Units / Rail
ORDERING INFORMATION
2N6387, 2N6388
http://onsemi.com
2
80
40
20
0
20 40 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
60
T
A
T
C
4.0
2.0
1.0
3.0
0 60 140
T
A
T
C
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 200 mAdc, I
B
= 0) 2N6387
2N6388
V
CEO(sus)
60
80
−
−
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0) 2N6387
(V
CE
= 80 Vdc, I
B
= 0) 2N6388
I
CEO
−
−
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 1.5 Vdc) 2N6387
(V
CE
− 80 Vdc, V
EB(off)
= 1.5 Vdc) 2N6388
(V
CE
= 60 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 125_C) 2N6387
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 125_C) 2N6388
I
CEX
−
−
−
−
300
300
3.0
3.0
mAdc
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
− 5.0 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 3.0 Vdc) 2N6387, 2N6388
(I
C
= 1 0 Adc, V
CE
= 3.0 Vdc) 2N6387, 2N6388
h
FE
1000
100
20,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 0.01 Adc) 2N6387, 2N6388
(I
C
= 10 Adc, I
B
= 0.1 Adc) 2N6387, 2N6388
V
CE(sat)
−
−
2.0
3.0
Vdc
Base−Emitter On Voltage
(I
C
= 5.0 Adc, V
CE
= 3.0 Vdc) 2N6387, 2N6388
(I
C
= 10 Adc, V
CE
= 3.0 Vdc) 2N6387, 2N6388
V
BE(on)
−
−
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz) |h
fe
| 20 − −
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
ob
− 200 pF
Small−Signal Current Gain (I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f = 1.0 kHz) h
fe
1000 − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N6387, 2N6388
http://onsemi.com
3
Figure 2. Switching Times Test Circuit
7.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMPS)
t, TIME (s)μ
5.0
0.7
0.3
0.2
0.2 10
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t
f
0.07
1.0 5.0
t
s
t
r
0.1
1.0
3.0
0.5 2.0
0
V
CC
+ 30 V
SCOPE
TUT
- 4.0 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
D
1
MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE I
B
[ 100 mA
MSD6100 USED BELOW I
B
[ 100 mA
25 ms
D
1
51
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
1
APPROX
+ 12 V
V
2
APPROX
- 8 V
[ 8.0 k [ 120
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
R
B
t
d
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
Z
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
P1-P3P4-P6

2N6388

Mfr. #:
Buy 2N6388
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT 80Vcbo 80Vceo 5.0Vebo 10A 250mA
Lifecycle:
New from this manufacturer.
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