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4
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 100°C
SECOND BREAKDOWN LIMITED
20
1.0
Figure 5. Active-Region Safe Operating Area
2.0
0.03
10 20 80
T
J
= 150°C
0.2
5.0
0.5
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
40
1.0
0.1
dc
2.0 604.0 6.0
50 ms
10 ms
CURVES APPLY BELOW RATED V
CEO
5 ms
1 ms
50 ms
2N6387
2N6388
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
10,000
1.0
Figure 6. Small−Signal Current Gain
f, FREQUENCY (kHz)
10
2.0 5.0 10 20 50 100 200 1000
500
300
100
5000
h
FE
, SMALL-SIGNAL CURRENT GAIN
20
3000
200
500
2000
1000
30
50
T
C
= 25°C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
300
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
30
1.0 2.0 5.0 20 10010
C, CAPACITANCE (pF)
200
100
70
50
C
ib
C
ob
500.2 0.5
T
J
= 25°C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
h
FE
, DC CURRENT GAIN
T
J
= 150°C
25°C
-55°C
V
CE
= 4.0 V
200
7.0
20,000
5000
10,000
3000
2000
1000
3.0 5.0
Figure 9. Collector Saturation Region
3.0
I
B
, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
I
C
= 2.0 A
T
J
= 25°C
4.0 A 6.0 A
1.0
0.7 2010
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5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0
0
- 1.0
I
C
, COLLECTOR CURRENT (AMP)
V
BE(sat)
@ I
C
/I
B
= 250
V, VOLTAGE (VOLTS)
Figure 10. “On” Voltages
V
CE(sat)
@ I
C
/I
B
= 250
T
J
= 25°C
V
BE
@ V
CE
= 4.0 V
0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0
3.0
2.5
2.0
1.5
1.0
0.5
Figure 11. Temperature Coefficients
I
C
, COLLECTOR CURRENT (AMP)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
*q
VC
for V
CE(sat)
-55°C to 25°C
25°C to 150°C
*I
C
/I
B
h
FE
@V
CE
+4.0V
3
-55°C to 25°C
25°C to 150°C
q
VB
for V
BE
- 2.0
- 3.0
- 4.0
- 5.0
+ 1.0
+ 2.0
+ 3.0
+ 4.0
+ 5.0
10
5
Figure 12. Collector Cut−Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
2
10
1
10
0
, COLLECTOR CURRENT (A)
μ
I
C
10
-1
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
REVERSE FORWARD
10
3
10
4
+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4
Figure 13. Darlington Schematic
BASE
COLLECTOR
EMITTER
[ 8.0 k [ 120
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.024 0.36 0.61
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
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2N6387/D
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2N6388G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 10A 80V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
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