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PI3B16215A

P1-P3P4-P5
1
PS8190E 02/26/02
1A1
1A2
1A3
1A4
1A5
1A6
1A7
1A8
1A9
1A10
1
2
3
4
5
6
7
GND
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
BIASV
2A1
2A2
2A4
2A5
2A6
2A7
2A8
2A9
2A10
2A3
V
CC
1B5
1B1
1B2
1B3
1B4
1B8
1B6
1B7
1B10
1B9
1OE
GND
GND
2B1
2B2
2B3
2B4
2B5
2B6
GND
2B7
2B8
2B9
2B10
2OE
1A10
1A1
1OE
2A1
2OE
2A10
24
13
47
48
12
2
46
36
35
25
1
BIASV
1B1
1B10
2B1
2B10
SW
SW
SW
SW
BA
OE
Product Description
Pericom Semiconductors PI3B series of logic circuits are produced
using the companys advanced submicron CMOS Technology.
The PI3B16215 provides 20-bits of high-speed bus switching. The
switches low ON-state resistance allows connections to be made
with minimal propagation delay also precharges the B-port to a user-
selectable bias voltage (BIASV) to minimize live- insertion noise.
The device is organized as dual 10-bit bus switches with individual
output-enable (OE) inputs. When OE is LOW, the corresponding
10-bit bus switch is on and port A is connected to port B. When OE
is HIGH, the switch is open, a high-impedance state exists between
the two ports, and port B is precharged to BIASV through the
equivalent of a 10-kohm resistor.
To ensure the high-impedance state on power up or power down,
OE should be tied to V
CC
through a pullup resistor; the minimum
value of the resistor is determined by the current-sinking capability
of the driver connected to OE.
Product Features
Near Zero Propagation Delay
5-ohm Switches Connect Between Two Ports
Fast Switching Speed: 4.5ns max.
B-Port Outputs are precharged by Bias Voltage
to minimize signal distortion during live insertion
Package options include:
48-pin 150-mil wide plastic BQSOP (B)
48-pin 240-mil wide plastic TSSOP (A)
48-pin 300-mil wide plastic SSOP (V)
Product Pin Configuration
Logic Block Diagram
3.3V, 20-Bit NanoSwitch
w/Precharged Outputs
PI3B16215
48-Pin
A,B,V
2
PS8190E 02/26/02
PI3B16215
3.3V, 20-Bit NanoSwitch
w/Precharged Outputs
EOnoitcnuF
LtropB=tropA
HVSAIB=troPB,Z=tropA
Storage Temperature Range, T
STG
......................................
65ºC to +150ºC
Supply Voltage Range, V
CC
......................................... 0.5V to +4.6V
Bias Voltage Range, BIASV ........................................ 0.5V to +4.6V
Input Voltage Range ........................................................0.5V to +4.6V
DC Output Current ....................................................................... 120mA
Power Dissipation ............................................................................ 0.5W
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Electrical Characteristics (Over the Operating Range, T
A
= 40°C to +85°C, V
CC
= 3 . 0 V t o 3 . 6 V )
Notes:
1. This is the increase in supply current for each input (OE only) that is at the specified voltage level rather than V
CC
or GND.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On state
resistance is determined by the lower of the voltages of the two (A or B) terminals.
retemaraPnoitpircseDsnoitidnoCtseT.niM.pyT.xaMstinU
VSAIBegatloVsaiB 0V
CC
V
V
HI
egatloVtupnIlortnoCleveL-hgiHV
CC
V6.3otV7.2=2
V
LI
egatloVtupnIlortnoCleveL-woLV
CC
V6.3otV7.2=5.08.0
V
KI
egatloVedoiDpmalCV
CC
V0.3=I
I
Am81=7.02.1
I
I
tnerruCtupnIV
CC
V6.3=V
I
V=
CC
DNGro5±
A
I
HZO
tnerruCtuptuOecnadepmIhgiHV
CC
0=V
I
V=
O
V6.3ot0=01
I
O
tnerruCtuptuOV
CC
V0.3=V,V4.2=VSAIB
O
0=51.0Am
I
CC
tnerruCylppuSrewoPtnecseiuQV
CC
V6.3=I
O
V,0=
I
V=
CC
DNGro01
A
I
CC
)1(
tnerruCylppuSV
CC
V6.3=,V3tatupnIenO
VtastupnIrehtO
CC
ro
DNG
057
C
NI
ecnaticapaCtupnIV
I
0roV0.3=0.3
Fp
C
FFO
ffOhctiwSecnaticapaCB/AV
O
0roV0.3=ffOhctiwS5.8
R
NO
)2(
ecnatsiseRnOhctiwSV
I
0=I
I
Am46=58
I
I
Am42=58
V
I
V4.2=I
I
Am51=0151
Truth Table
3
PS8190E 02/26/02
PI3B16215
3.3V, 20-Bit NanoSwitch
w/Precharged Outputs
Switching Characteristics over Operating Range
(Switching characteristics over recommended operating free-air temperature range unless otherwise noted)
retemaraPsnoitidnoCtseT)tupnI(morF)tuptuO(oT
V
CC
%01±V3.3=
stinU.niM.xaM
t
DP
)1(
BroAAroB52.0
sn
t
HZP
DNG=VSAIB
EOBroA
5.4
t
LZP
V3=VSAIB 5.4
t
ZHP
DNG=VSAIB 0.5
t
ZLP
V3=VSAIB 0.5
Input
tPLH
tPHL
2.7V
1.5V
1.5V
1.5V
1.5V
0V
Output
VOH
VOL
500
500
GND
6V
Open
S1
LOAD CIRCUIT
From Output
Under Test
C
L
= 50pF
(See Note 1)
tPZL
Output
Control
(Low Level
Enabling)
0V
1.5V
1.5V
1.5V
1.5V
t
PLZ
tPHZ
VOL
3V
0V
t
PZH
+0.3V
-0.3V
Output
Waveform 1
S1 at 2x V
CC
(see Note 2)
Output
Waveform 2
S1 at GND
(see Note 2)
V
OH
VOH
VOL
2.7V
Voltage Waveforms Propagation Delay Times
Voltage Waveforms Enable and Disable Times
Test S1
t
PD
Open
t
PLZ
/t
PZL
6V
t
PHZ
/t
PZH
GND
Parameter Measurements (V
CC
= 2.7 and 3.3V ±10%)
Notes:
1. C
L
includes probe and jig capacitance.
2. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
3. All input impulses are supplied by generators having the following characteristics: PRR ≤ MHz, Z
O
= 50Ω, t
R
≤ 2.5ns, t
F
≤ 2.5ns.
4. The outputs are measured one at a time with one transition per measurement.
5. t
TPZ
and t
PHZ
are the same as t
DIS
6. t
PZL
and t
PZH
are the same as t
EN
7. t
PLH
and t
PHL
are the same as t
PD
Figure 1. Load Circuit and Voltage Waveforms
Note:
1. The propagation delay is the calculated RC time of the typical on-state resistance of the switch and the specified load
capacitance, when driven by an ideal voltage source (zero output impedance).
P1-P3P4-P5

PI3B16215A

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Description:
IC SWITCH DUAL 10X10 48TSSOP
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