N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
*R
DS(on)
=3Ω
* Low threshold voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T
amb
=25°C I
D
320 mA
Pulsed Drain Current I
DM
6A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.75 1.5 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
500
µA
µA
V
DS
=100 V, V
GS
=0
V
DS
=80 V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1) I
D(on)
750 mA V
DS
=25 V, V
GS
=5V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
4.5
3.0
Ω
Ω
V
GS
=5V,I
D
=250mA
V
GS
=10V, I
D
=500mA
Forward Transconductance
(1)(2)
g
fs
225 mS V
DS
=25V,I
D
=500mA
Input Capacitance (2) C
iss
75 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
8pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
≈25V, V
GS
=10V, I
D
=1A
Rise Time (2)(3) t
r
12 ns
Turn-Off Delay Time (2)(3) t
d(off)
15 ns
Fall Time (2)(3) t
f
13 ns
E-Line
TO92 Compatible
ZVNL110A
3-400
