MT8HTF25664AZ-667C1 Datasheet MT8HTF12864AZ-667H1, MT8HTF12864AZ-800H1, MT8HTF12864AZ-800M1 | P1-P3

DDR2 SDRAM UDIMM

MT8HTF6464AZ – 512MB

MT8HTF12864AZ – 1GB

MT8HTF25664AZ – 2GB

Features

• 240-pin, unbuffered dual in-line memory module

• Fast data transfer rates: PC2-3200, PC2-4200,

PC2-5300, PC2-6400, or PC2-8500

• 512MB (54 Meg x 64), 1GB (128 Meg x 64), or 2GB

(256 Meg x 64)

• V

= V

DDQ

= 1.8V

• V

DDSPD

= 1.7–3.6V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Multiple internal device banks for concurrent

operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1

• Programmable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Serial presence detect (SPD) with EEPROM

• Halogen-free

• Gold edge contacts

• Single rank

Figure 1: 240-Pin UDIMM (MO-237 R/C D)

Module height: 30mm (1.181 in)

Alternate EEPROM Placement

Options Marking

• Operating temperature

– Commercial (0°C ≤ T

≤ +70°C) None

– Industrial (–40°C ≤ T

≤ +85°C) I

• Package

– 240-pin DIMM (halogen-free) Z

• Frequency/CL

– 1.875ns @ CL = 7 (DDR2-1066) -1GA

– 2.5ns @ CL = 5 (DDR2-800) -80E

– 2.5ns @ CL = 6 (DDR2-800) -800

– 3.0ns @ CL = 5 (DDR2-667) -667

Notes:

1. Contact Micron for industrial temperature

module offerings.

2. CL = CAS (READ) latency.

Table 1: Key Timing Parameters

Speed

Grade

Industry

Nomenclature

Data Rate (MT/s) t

RCD

(ns)

(ns)CL = 7 CL = 6 CL = 5 CL = 4 CL = 3

-1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125

-80E PC2-6400 800 800 533 400 12.5 12.5 57.5

-800 PC2-6400 800 667 533 400 15 15 60

-667 PC2-5300 – 667 553 400 15 15 60

-53E PC2-4200 – – 553 400 15 15 55

-40E PC2-3200 – – 400 400 15 15 55

512MB, 1GB, 2GB (x64, SR) 240-Pin DDR2 UDIMM

Features

PDF: 09005aef83b94f21

htf8c64_128_256x64az.pdf - Rev. E 4/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Table 2: Addressing

Parameter 512MB 1GB 2GB

Refresh count 8K 8K 8K

Row address 16K A[13:0] 16K A[13:0] 32K A[14:0]

Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0]

Device configuration 512MB (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8)

Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]

Module rank address 1 S0# 1 S0# 1 S0#

Table 3: Part Numbers and Timing Parameters – 512MB

Base device: MT47H64M8,

512Mb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT8HTF6464A(I)Z-80E__ 512MB 64 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 5-5-5

MT8HTF6464A(I)Z-800__ 512MB 64 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 6-6-6

MT8HTF6464A(I)Z-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5

Table 4: Part Numbers and Timing Parameters – 1GB

Base device: MT47H128M8,

1Gb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT8HTF12864A(I)Z-1GA__ 1GB 128 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7

MT8HTF12864A(I)Z-80E__ 1GB 128 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 5-5-5

MT8HTF12864A(I)Z-800__ 1GB 128 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 6-6-6

MT8HTF12864A(I)Z-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5

Table 5: Part Numbers and Timing Parameters – 2GB

Base device: MT47H256M8,

2Gb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT8HTF25664A(I)Z-1GA__ 2GB 256 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7

MT8HTF25664A(I)Z-80E__ 2GB 256 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 5-5-5

MT8HTF25664A(I)Z-800__ 2GB 256 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 6-6-6

MT8HTF25664A(I)Z-667__ 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5

Notes:

1. The data sheet for the base device can be found on Micron’s Web site.

2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.

Consult factory for current revision codes. Example: MT8HTF12864AZ-800M1.

512MB, 1GB, 2GB (x64, SR) 240-Pin DDR2 UDIMM

Features

PDF: 09005aef83b94f21

htf8c64_128_256x64az.pdf - Rev. E 4/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Pin Assignments

Table 6: Pin Assignments

240-Pin UDIMM Front 240-Pin UDIMM Back

Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol

1 V

REF

31 DQ19 61 A4 91 V

121 V

151 V

181 V

DDQ

211 DM5

2 V

32 V

62 V

DDQ

92 DQS5# 122 DQ4 152 DQ28 182 A3 212 NC

3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 V

4 DQ1 34 DQ25 64 V

94 V

124 V

154 V

184 V

214 DQ46

5 V

35 V

65 V

95 DQ42 125 DM0 155 DM3 185 CK0 215 DQ47

6 DQS0# 36 DQS3# 66 V

96 DQ43 126 NC 156 NC 186 CK0# 216 V

7 DQS0 37 DQS3 67 V

97 V

127 V

157 V

187 V

217 DQ52

8 V

38 V

68 NC 98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53

9 DQ2 39 DQ26 69 V

99 DQ49 129 DQ7 159 DQ31 189 V

219 V

10 DQ3 40 DQ27 70 A10 100 V

130 V

160 V

190 BA1 220 CK2

11 V

41 V

71 BA0 101 SA2 131 DQ12 161 NC 191 V

DDQ

221 CK2#

12 DQ8 42 NC 72 V

DDQ

102 NC 132 DQ13 162 NC 192 RAS# 222 V

13 DQ9 43 NC 73 WE# 103 V

133 V

163 V

193 S0# 223 DM6

14 V

44 V

74 CAS# 104 DQS6# 134 DM1 164 NC 194 V

DDQ

224 NC

15 DQS1# 45 NC 75 V

DDQ

105 DQS6 135 NC 165 NC 195 ODT0 225 V

16 DQS1 46 NC 76 NC 106 V

136 V

166 V

196 A13 226 DQ54

17 V

47 V

77 NC 107 DQ50 137 CK1 167 NC 197 V

227 DQ55

18 NC 48 NC 78 V

DDQ

108 DQ51 138 CK1# 168 NC 198 V

228 V

19 NC 49 NC 79 V

109 V

139 V

169 V

199 DQ36 229 DQ60

20 V

50 V

80 DQ32 110 DQ56 140 DQ14 170 V

DDQ

200 DQ37 230 DQ61

21 DQ10 51 V

DDQ

81 DQ33 111 DQ57 141 DQ15 171 NC 201 V

231 V

22 DQ11 52 CKE0 82 V

112 V

142 V

172 V

202 DM4 232 DM7

23 V

53 V

83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 NC 233 NC

24 DQ16 54 NC/BA2

84 DQS4 114 DQS7 144 DQ21 174 NC/A14

204 V

234 V

25 DQ17 55 NC 85 V

115 V

145 V

175 V

DDQ

205 DQ38 235 DQ62

26 V

56 V

DDQ

86 DQ34 116 DQ58 146 DM2 176 A12 206 DQ39 236 DQ63

27 DQS2# 57 A11 87 DQ35 117 DQ59 147 NC 177 A9 207 V

237 V

28 DQS2 58 A7 88 V

118 V

148 V

178 V

208 DQ44 238 V

DDSPD

29 V

59 V

89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0

30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 V

240 SA1

Notes:

1. Pin 54 is NC for 512MB, or BA2 for 1GB and 2GB.

2. Pin 174 is NC for 512MB and 1GB, or A14 for 2GB.

512MB, 1GB, 2GB (x64, SR) 240-Pin DDR2 UDIMM

Pin Assignments

PDF: 09005aef83b94f21

htf8c64_128_256x64az.pdf - Rev. E 4/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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MT8HTF25664AZ-667C1

Mfr. #:

Buy MT8HTF25664AZ-667C1

Manufacturer:

Micron

Description:

MODULE DDR2 SDRAM 2GB 240UDIMM

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MT8HTF25664AZ-667C1

MT8HTF25664AZ-667C1

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