STPS8L30B Datasheet STPS8L30B-TR, STPS8L30B, STPS8L30H | P1-P3

October 2016

DocID5515 Rev 5

1/9

This is information on a product in full production.

www.st.com

STPS8L30

Low drop power Schottky rectifier

Datasheet - production data

Features

 Low cost device with low drop forward

voltage for less power dissipation and

reduced heatsink

 Optimized conduction/reverse losses

trade-off which leads to the highest yield in

the application

 High power surface mount miniature

package

 Avalanche capability specified

 ECOPACK

®

2 compliant component for

DPAK on demand

Description

Single Schottky rectifier suited to switched mode

power supplies and high frequency DC to DC

converters.

Packaged in DPAK, this device is especially

intended for use as a rectifier at the secondary of

3.3 V SMPS or DC/DC units, freewheeling and

polarity protection applications.

Table 1: Device summary

Symbol

Value

I

F(AV)

8 A

V

RRM

30 V

T

j

(max.)

150 °C

V

F

(typ.)

0.35 V

DPAK

K

A

K

A

NC

A

NC

Characteristics

STPS8L30

2/9

DocID5515 Rev 5

1 Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

30

V

I

F(RMS)

Forward rms current

7

A

I

F(AV)

Average forward current

δ = 0.5, square wave

T

C

= 135 °C

8

A

I

FSM

Surge non repetitive forward current

t

p

= 10 ms sinusoidal

75

A

P

ARM

Repetitive peak avalanche power

t

p

= 10 µs, T

j

= 125 °C

215

W

T

stg

Storage temperature range

-65 to +150

°C

T

j

Maximum operating junction temperature

(1)

150

°C

Notes:

(1)

(dP

tot

/dT

j

) < (1/R

th(j-a)

) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

R

th(j-c)

Junction to case

2.5

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

-

1

mA

T

j

= 100 °C

-

15

40

V

F

(1)

Forward voltage drop

T

j

= 25 °C

I

F

= 8 A

-

0.49

V

T

j

= 125 °C

-

0.35

0.40

T

j

= 25 °C

I

F

= 16 A

-

0.63

T

j

= 125 °C

-

0.448

0.57

Notes:

(1)

Pulse test: t

p

= 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.23 x I

F(AV)

+ 0.021 x I

F

2

(RMS)

STPS8L30

Characteristics

DocID5515 Rev 5

3/9

1.1 Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus ambient

temperature (δ = 0.5)

Figure 3: Normalized avalanche power derating

versus pulse duration (T

j

= 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values)

P (W)

F(AV)

T

δ

=tp/T

tp

I (A )

F(AV )

δ = 1

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

0 4 10

0.0

1.0

2.0

3.0

4.0

5.0

2

6

8

R

th(j-a)

= R

th(j-c)

0

1

2

3

4

5

6

7

8

9

R

th(j-a)

= 70 °C/W

0 25

50 75

100 125

150

t

P

(µs)

0.001

0.01

0.1

1

10 100

10001

P

ARM

(t

P

) / P

ARM

(10 µs)

Z /R

th(j-c) th(j-c)

1E-4 1E-3 1E-2 1E-1 1E+0

0.0

0.2

0.4

0.6

0.8

1.0

T

δ

=tp/T

tp

t (s )

p

δ = 0.1

Single pulse

δ = 0.2

δ = 0.5

0 5 10 15 20 25 30

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

3E+2

I (mA)

R

V (V)

R

T

j

= 150 °C

T

j

= 25 °C

T

j

= 125 °C

40

100

200

500

1000

2000

C(pF)

V (V)

R

F= 1 MHz

V

OSC

= 30 mV

RMS

T

j

= 25 °C

1

10

STPS8L30B

STPS8L30B

Products related to this Datasheet