WeEn Semiconductors
ACT108-800E
AC Thyristor power switch
ACT108-800E All information provided in this document is subject to legal disclaimers.
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤ 75 °C; Fig. 1; Fig. 2;
Fig. 3
- 0.8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 13 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 14.3 A
I
2
t I
2
t for fusing t
p
= 10 ms; sine-wave pulse - 0.84 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 20 mA - 100 A/µs
I
GM
peak gate current t = 20 μs - 1 A
V
GM
peak gate voltage positive applied gate voltage - 15 V
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state; ten
pulses on each voltage polarity; 20s or
more between successive pulses; Fig. 6
- 2.5 kV
T
lead
(°C)
-50 1501000 50
aaa-011238
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
75°C
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
aaa-011239
5
10
15
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10110
-1
f = 50 Hz; T
lead
= 75 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
