NVTFS4C06NTAG

NVTFS4C06N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.1 1 10 100
0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 5 10 15 20 25 30
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
V
GS
= 10 V
T
C
= 25°C
650 mm
2
2 oz Cu Pad
100 ms
10 ms
1 ms
dc
10 ms
Q
gs
Q
T
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
0 2 4 6 8 10 12 14 16 18 20 22 24 26
1.0
10
100
1000
1 10 100
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
R
DS(on)
Limit
Thermal Limit
Package Limit
NVTFS4C06N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 5 10 15 20 25 30 35 40 45 50 55 60
Figure 12. Thermal Response
PULSE TIME (sec)
R
q
JA(t)
(°C/W)
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 13. G
FS
vs. I
D
I
D
(A)
G
FS
(S)
Figure 14. Avalanche Characteristics
T
AV
, TIME IN AVALANCHE (s)
I
PEAK
, DRAIN CURRENT (A)
1
10
100
T
J(initial)
= 25°C
T
J(initial)
= 125°C
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
1.E−031.0E−06 1.0E−05 1.0E−04
ORDERING INFORMATION
Device Package Shipping
NVTFS4C06NTAG WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C06NWFTAG WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C06NTWG WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS4C06NWFTWG WDFN8
(Pb−Free)
5000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVTFS4C06N
http://onsemi.com
6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M 1.40 1.50
q 0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
B
A
0.20
C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00 −−
b 0.23 0.30
c 0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and solderin
g
details, please download the ON Semiconductor Soldering an
d
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75
2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40
0.009 0.012 0.016
E3
4X
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NVTFS4C06N/D
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NVTFS4C06NTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET U8FL 30V 71A 4.2MOHM
Lifecycle:
New from this manufacturer.
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