OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIP32455EVB

P1-P3P4-P6P7-P9P10-P12
Vishay Siliconix
SiP32454, SiP32455
Document Number: 62531
S12-0967-Rev. A, 07-May-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: powerictechsupport@vishay.com
0.8 V to 2.5 V, 28 mΩ, Slew Rate Controlled Load Switch in WCSP4
DESCRIPTION
The SiP32454 and SiP32455 are slew rate controlled
integrated high side load switches that operate in the input
voltage range from 0.8 V to 2.5 V. The SiP32454 and
SiP32455 are of N-channel MOSFET switching elements
that provide 28 mΩ switch on resistance. They have a 1 ms
at 1.2 V and 1.5 ms at 2.5 V slow slew rate that limits the
in-rush current and minimizes the switching noise. These
devices’ low voltage logic control threshold can interface with
low voltage control I/O directly without extra level shift or
driver. A 2 MΩ pull-down resistor is integrated at logic control
EN pin. SiP32454 integrates a switch OFF output discharge
circuit.
Both SiP32454 and SiP32455 are available in compact wafer
level CSP package, WCSP4 0.8 mm x 0.8 mm with 0.4 mm
pitch.
FEATURES
• Low input voltage, 0.8 V to 2.5 V
• Low R
ON
, 28 mΩ typical
• Slew rate control
• Low logic control with hysteresis
• Reverse current blocking when disabled
• Integrated output discharge switch for SiP32454
• Integrated pull down resistor at EN pin
• 4 bump WCSP 0.8 mm x 0.8 mm with 0.4 mm pitch
package
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?9991
APPLICATIONS
• Battery operated devices
• Smart phones
• GPS and PMP
• Computer
• Medical and healthcare equipment
• Industrial and instrument
• Cellular phones and portable media players
• Game console
TYPICAL APPLICATION CIRCUIT
Figure 1 - SiP32454 and SiP32455 Typical Application Circuit
SiP32454, SiP32455
IN
V
OUT
OUT
V
IN
GND
GND
GND
EN
EN
C
IN
C
OUT
www.vishay.com
2
Document Number: 62531
S12-0967-Rev. A, 07-May-12
Vishay Siliconix
SiP32454, SiP32455
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: powerictechsupport@vishay.com
Note:
GE1 denotes halogen-free and RoHS compliant
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 3.6 mW/°C above T
A
= 70 °C.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Temperature Range Package Marking Part Number
- 40 °C to 85 °C
WCSP: 4 Bumps
(2 x 2, 0.4 mm pitch,
208 µm bump height,
0.8 mm x 0.8 mm die size)
AD SiP32454DB-T2-GE1
AE SiP32455DB-T2-GE1
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Supply Input Voltage (V
IN
) - 0.3 to 2.75
VEnable Input Voltage (V
EN
) - 0.3 to 2.75
Output Voltage (V
OUT
) - 0.3 to 2.75
Maximum Continuous Switch Current (I
max.
)1.2
A
Maximum Pulsed Current (I
DM
) V
IN
(Pulsed at 1 ms, 10 % Duty Cycle) 2
ESD Rating (HBM) 4000 V
Junction Temperature (T
J
) - 40 to 150 °C
Thermal Resistance (θ
JA
)
a
280 °C/W
Power Dissipation (P
D
)
a
196 mW
RECOMMENDED OPERATING RANGE
Parameter Limit Unit
Input Voltage Range (V
IN
)
0.8 to 2.5 V
Operating Junction Temperature Range - 40 to 125 °C
Document Number: 62531
S12-0967-Rev. A, 07-May-12
www.vishay.com
3
Vishay Siliconix
SiP32454, SiP32455
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: powerictechsupport@vishay.com
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For V
IN
outside this range consult typical EN threshold curve.
SPECIFICATIONS
Parameter Symbol
Test Conditions Unless Specified
V
IN
= 1 V, T
A
= - 40 °C to 85 °C
(Typical values are at T
A
= 25 °C)
Limits
Unit
Min.
a
Typ.
b
Max.
a
Operating Voltage
c
V
IN
0.8 - 2.5 V
Quiescent Current
I
Q
V
IN
= 1.2 V, V
EN
= V
IN
, OUT = open
-1015
µA
V
IN
= 2.5 V, V
EN
= V
IN
, OUT = open
-3460
Off Supply Current
I
Q(off)
SiP32454
EN = GND, OUT = open
--30
SiP32455 - - 1
Off Switch Current
I
DS(off)
EN = GND, OUT = 0 V - - 30
Reverse Blocking Current
I
RB
V
OUT
= 2.5 V, V
IN
= 0.9 V, V
EN
= 0 V
- 0.001 30
On-Resistance
R
DS(on)
V
IN
= 1 V, I
L
= 200 mA, T
A
= 25 °C
-3035
mΩ
V
IN
= 1.2 V, I
L
= 200 mA, T
A
= 25 °C
-2935
V
IN
= 1.8 V, I
L
= 200 mA, T
A
= 25 °C
-2835
V
IN
= 2.5 V, I
L
= 200 mA, T
A
= 25 °C
-2835
On-Resistance Temp.-Coefficient
TC
RDS
-4100-ppm/°C
Output Pulldown Resistance
R
PD
V
EN
= 0 V, T
A
= 25 °C (SiP32454 only)
- 417 550 Ω
EN Input Low Voltage
c
V
IL
V
IN
= 1 V
--0.1
V
EN Input High Voltage
c
V
IH
V
IN
= 2.5 V
1.5 - -
EN Input Leakage
I
EN
V
IN
= 2.5 V, V
EN
= 0 V
--1
µA
V
IN
= 2.5 V, V
EN
= 2.5 V
-6.512
Output Turn-On Delay Time
t
d(on)
V
IN
= 1.2 V
R
LOAD
= 10 Ω, C
L
= 0.1 µF,
T
A
= 25 °C
-0.61.2
ms
V
IN
= 2.5 V
-0.61.2
Output Turn-On Rise Time
t
r
V
IN
= 1.2 V
0.411.6
V
IN
= 2.5 V
0.5 1.5 2.5
Output Turn-Off Delay Time
t
d(off)
V
IN
= 1.2 V
-0.31
µs
V
IN
= 2.5 V
-0.11
P1-P3P4-P6P7-P9P10-P12

SIP32455EVB

Mfr. #:
Buy SIP32455EVB
Manufacturer:
Vishay / Siliconix
Description:
Power Management IC Development Tools Development Board For SiP32455 Series
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet