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MBR735
P1-P3
P4-P6
Tech
nic
al
Data
Data Sheet
N0720, Rev.
A
China
-
Germany
-
Korea
-
Singapore
-
United States
http://www.smc-diodes.com
-
sales@ smc-diodes.com
MBR735/MBRB
735
MBR745/MBRB
745
MBR735/MBR
745/MBRB735
/MBRB7
45
SCHOTTKY
RECTIFIE
R
Features
A
pplic
ations
MBR...
MBRB...
TO-220A
C
D
2
PAK
Maximum Ratings:
Characterist
ics
Symbol
Conditio
n
Max.
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RW
M
V
R
-
35
(MBR735)
V
45
(MBR745)
Average Rectified Forward Current
I
F (AV)
50% duty cycle @Tc=131°C,
rectangular wave form
7.5
A
Peak One Cycle Non-Repetitive Surge
Current
I
FSM
8.3ms, Half Sine pulse
150
A
Peak Repetitive Reverse Surge Current
I
RRM
2.0
μ
sec 1.0KHz
1.0
A
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
150
℃
T
J
operation
High purity, high temperature epox
y encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced rugged
ness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offe
red upon request
Tech
nic
al
Data
Data Sheet
N0720, Rev.
A
China
-
German
y
-
K
orea
-
S
ingapore
-
Unit
ed States
http://www.smc-diodes.com
-
sales@ smc-diodes.com
MBR735/MBRB
735
MBR745/MBRB
745
*
Pulse width
< 300 µ
s,
duty cycle
< 2%
Characterist
ics
Symbol
Conditio
n
Specification
Units
Junction Temperature
T
J
-
-55 to +150
C
Storage Temperature
T
stg
-
-55 to +150
C
Typical Thermal Resistance Junction to
Case
R
JC
DC operation
3.0
C/W
Typical Thermal Resistance
Case to Heat Sink
R
CS
Mounting surface, smooth and
greased(only for TO-220)
0.50
C/W
Case Style
TO-220ACD
2
PAK
For information
on tape
an
d reel specifica
tions, including
p
art
orientation an
d tape size
s, please refer
to ou
r tape and ree
l
packaging
sp
ecification.
Electrical Characteristics:
Characterist
ics
Symbol
Conditio
n
Typ.
Max.
Units
Forward Voltage Drop*
V
F1
@15A, Pulse, T
J
= 25
℃
0.55
0.84
V
V
F2
@ 7.5A, Pulse, T
J
= 125
℃
0.39
0.57
V
Reverse Current *
I
R1
@V
R
= rated V
R
T
J
= 25
℃
0.02
0.1
mA
I
R2
@V
R
= rated V
R
T
J
= 125
℃
20
25.0
mA
Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
℃
f
SIG
= 1MHz
650
700
pF
Series Inductance
L
S
Measured lead to lead 5 mm from
package body
8.0
-
nH
Voltage Rate of Change
dv/dt
-
-
10,000
V/μs
Thermal-Mechanical Specifications:
Tube Specification
Tube Specification(TO-220AC)
Device
Package
Weight
Shipping
MBR...
TO-220AC
1.8g
50pcs / tube
MBRB...
D
²
PAK
1.85g
800pcs / reel
Tech
nic
al
Data
Data Sheet
N0720, Rev.
A
China
-
German
y
-
K
orea
-
S
ingapore
-
Unit
ed States
http://www.smc-diodes.com
-
sales@ smc-diodes.com
MBR735/MBRB
735
MBR745/MBRB
745
Ratings and Characteristics Curves
0.0
0.2
0.4
0.6
0.8
Forward V
oltage Dr
op - V
F
(V)
10
-1
10
0
10
1
Instantane
ous For
ward Current -
I
F
(A)
T
ypical Forward Characteristics
125 °
C
150 °
C
25 °C
0
10
20
30
40
50
60
Reverse V
oltage -
V
R
(V)
10
-3
10
-2
10
-1
10
0
10
1
10
2
Instantane
ous Reverse
Current -
I
R
(mA)
T
ypical Reverse Characteristi
cs
25 °C
50 °C
75 °C
100 °
C
125 °
C
150 °
C
0
10
20
30
40
50
60
Reverse V
oltage -
V
R
(V)
200
300
400
500
600
700
800
Junctio
n Capaci
tance -
C
T
(pF)
T
ypical Junction Capacitance
P1-P3
P4-P6
MBR735
Mfr. #:
Buy MBR735
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-MBR735-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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EMS
Payment:
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