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FN6025.5
June 9, 2014
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Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
ISL84514: 40
ISL84515: 40
PROCESS:
Si Gate CMOS
FIGURE 13. FREQUENCY RESPONSE
FIGURE 14. OFF-ISOLATION
Typical Performance Curves T
A
= +25°C, Unless Otherwise Specified (Continued)
FREQUENCY (MHz)
0
-3
-6
NORMALIZED GAIN (dB)
GAIN
PHASE
0
20
40
60
80
100
PHASE (°)
1 10 100 600
V
IN
= 0.2V
P-P
to 2.5V
P-P
(V+ = 3.3V)
V
IN
= 0.2V
P-P
to 5V
P-P
(V+ = 12V)
R
L
= 50
V+ = 3.3V
V+ = 12V
V+ = 12V
V+ = 3.3V
FREQUENCY (Hz)
1k 100k 1M 100M 500M10k 10M
110
10
20
30
40
50
60
70
80
90
100
OFF-ISOLATION (dB)
V+ = 3V to 13V
R
L
= 50
ISL84514, ISL84515
