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SI1473DH-T1-E3

P1-P3P4-P6P7-P9P10-P12
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4
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
Vishay Siliconix
Si1473DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.3 0.6 0.9 1.2 1.5
T
J
= 25 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.01
0.1
1
10
T
J
= 150 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
GS
- Gate-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
012345678 910
I
D
= 2 A
- On-Resistance (R
DS(on)
)
T
J
= 125 °C
T
J
= 25 °C
0
6
12
1
8
24
30
011100.0 0.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
T
C
= 25 °C
Single Pulse
- Drain Current (A)I
D
100 ms
1 s
DC
1 ms
10 ms
Limited by R
DS(on)
*
0.01
0.1
1
10
0.01
0.1
1
10 100
10 s
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
www.vishay.com
5
Vishay Siliconix
Si1473DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
0.0
0.9
1.8
2.7
3.6
4.5
0 25 50 75 100 125 150
Package Limited
Power Derating, Junction-to-Foot
0.0
0.7
1.4
2.1
2.8
3.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Power Derating, Junction-to-Ambient
0.00
0.24
0.48
0.72
0.96
1.20
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
Vishay Siliconix
Si1473DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74438
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 125 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
10
-3
10
-2
1 10 100010
-1
10
-4
100
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
P1-P3P4-P6P7-P9P10-P12

SI1473DH-T1-E3

Mfr. #:
Buy SI1473DH-T1-E3
Manufacturer:
Vishay
Description:
MOSFET P-CH 30V 2.7A SC70-6
Lifecycle:
New from this manufacturer.
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