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VSMY385010-GS08

P1-P3P4-P6P7-P7
VSMY385010
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 27-May-15
1
Document Number: 84294
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLight
TM
portfolio, the VSMY385010 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant intensity, high optical power
and high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength:
p
= 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
RELEASED FOR APPLICATIONS
Infrared radiation source for operation with CMOS cameras
(illumination)
• High speed IR data transmission
• IR touch panels
•3D gaming
•Light curtain
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
948553
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
p
(nm) t
r
(ns)
VSMY385010 9 ± 60 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY385010-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2
VSMY385010-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
70 mA
Pulse peak forward current t
p
/T = 0.5, t
p
100 μs I
FM
140 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
140 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +85 °C
Soldering temperature acc. figure 7, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
250 K/W
VSMY385010
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 27-May-15
2
Document Number: 84294
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
140
0 20406080100
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
R
thJA
= 250 K/W
0
10
20
30
40
50
60
70
80
0 20406080100
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
R
thJA
= 250 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 70 mA, t
p
= 20 ms V
F
1.6 2.0 V
I
F
= 1 A, t
p
= 100 μs V
F
2.9 V
Temperature coefficient of V
F
I
F
= 70 mA TK
VF
-1.5 mV/K
Reverse current I
R
not designed for reverse operation μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 70 mA, t
p
= 20 ms I
e
5.5 9 16 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
130 mW/sr
Radiant power I
F
= 70 mA, t
p
= 20 ms
e
40 mW
Temperature coefficient of
e
I
F
= 70 mA TK
e
-0.25 %/K
Angle of half intensity ± 60 deg
Peak wavelength I
F
= 50 mA
p
840 850 870 nm
Spectral bandwidth I
F
= 50 mA  35 nm
Temperature coefficient of
p
I
F
= 70 mA TK
p
0.26 nm/K
Rise time I
F
= 70 mA t
r
10 ns
Fall time I
F
= 70 mA t
f
10 ns
10
100
1000
1.2 1.4 1.6 1.8 2.0
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
t
p
= 20 ms
90
95
100
105
110
115
-50 -25 0 25 50 75 100 125
V
F, rel
- Relative Forward Voltage (%)
T
amb
- Ambient Temperature (°C)
I
F
= 70 mA
t
p
= 20 ms
VSMY385010
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 27-May-15
3
Document Number: 84294
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Intensity vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
1
10
100
10 100 1000
I
e
- Radiant Intensity (mW/s r)
I
F
- Forward Current (mA)
t
p
= 20 ms
50
60
70
80
90
100
110
120
130
140
150
-50 -25 0 25 50 75 100 125
I
e, rel
- Relative Radiant Intensity (%)
T
amb
- Ambient Temperature (°C)
I
F
= 70 mA
t
p
= 20 ms
0
10
20
30
40
50
60
70
80
90
100
750 800 850 900 950 1000 1050
I
e, rel
- Relative Radiant Intensity (%)
λ - Wavelength (nm)
I
F
= 70 mA
I
e, rel
- Relative Radiant Intensity
λ - Wavelength (nm)
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ
- Angular Displacement
P1-P3P4-P6P7-P7

VSMY385010-GS08

Mfr. #:
Buy VSMY385010-GS08
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters - High Power 850nm 1.6V 60deg 40mW 130mW/sr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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