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BT136-600D,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NXP Semiconductors
BT136-600D
4Q T
riac
BT136-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
3 / 13
7.
Limiting values
T
able 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
-
600
V
I
T(RMS)
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1
;
Fig. 2
;
Fig. 3
-
4
A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4
;
Fig. 5
-
25
A
I
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
-
27
A
I
2
t
I2t for fusing
t
p
= 10 ms; SIN
-
3.1
A
2
s
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
-
50
A/µs
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
-
50
A/µs
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
-
50
A/µs
dI
T
/dt
rate of rise of on-state current
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
-
10
A/µs
I
GM
peak gate current
-
2
A
P
GM
peak gate power
-
5
W
P
G(A
V)
average gate power
over any 20 ms period
-
0.5
W
T
stg
storage temperature
-40
150
°C
T
j
junction temperature
-
125
°C
NXP Semiconductors
BT136-600D
4Q T
riac
BT136-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
4 / 13
T
mb
(°C)
-
50
150
100
0
50
003aae828
2
3
1
4
5
I
T(RMS)
(A)
0
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
003aae830
4
8
12
I
T(RMS)
(A)
0
surge duration (s)
10
-
2
10
1
10
-
1
2
6
10
f = 50 Hz
T
mb
≤ 107 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
003aae827
4
2
6
8
P
tot
(W)
0
I
T(RMS)
(A)
0
5
4
2
3
1
c
o
n
d
u
c
t
i
o
n
a
n
g
l
e
(d
e
g
re
e
s
)
f
o
r
m
f
a
c
t
o
r
a
3
0
6
0
9
0
1
2
0
1
8
0
4
2
.
8
2
.
2
1
.
9
1
.
5
7
α
α
= 180
°
120
°
90
°
60
°
30
°
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(A
V)
Fig. 3.
T
otal power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors
BT136-600D
4Q T
riac
BT136-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
5 / 13
003aae831
10
20
30
I
TSM
(A)
0
number of cycles
1
10
4
10
3
10
10
2
5
15
25
I
T
S
M
t
I
T
T
j(init)
=
2
5
°
C
m
a
x
1
/
f
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aae829
t
p
(s)
10
-
5
10
-
1
10
-
2
10
-
4
10
- 3
10
2
10
3
I
TSM
(A)
10
I
T
S
M
t
I
T
T
j(init)
=
2
5
°
C
m
a
x
t
p
(1)
(2)
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BT136-600D,127
Mfr. #:
Buy BT136-600D,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
Lifecycle:
New from this manufacturer.
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