BSO033N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
• Excellent gate charge x R
DS(on)
product (FOM)
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current
1)
I
D
V
GS
=10 V, T
A
=25 °C
22 17 A
V
GS
=10 V, T
A
=90 °C
15 12.1
V
GS
=4.5 V, T
A
=25 °C
21 16
V
GS
=4.5 V, T
A
=90 °C
14.3 11.3
Pulsed drain current
2)
I
D,pulse
T
A
=25 °C
Avalanche current, single pulse
3)
I
AS
T
A
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=22 A, R
GS
=25 Ω
mJ
Gate source voltage
V
GS
V
Power dissipation
1)
P
tot
T
A
=25 °C
2.5 1.56 W
Operating and storage temperature
T
j
, T
stg
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Value
154
22
150
±20
-55 ... 150
Type Package Marking
BSO033N03MS G PG-DSO-8 033N03MS
PG-DSO-8
V
DS
30 V
R
DS(on),max
V
GS
=10 V 3.3
mΩ
V
GS
=4.5 V 3.8
I
D
22 A
Product Summary
Rev.1.1 page 1 2009-11-19
